JPH0420253B2 - - Google Patents
Info
- Publication number
- JPH0420253B2 JPH0420253B2 JP11993284A JP11993284A JPH0420253B2 JP H0420253 B2 JPH0420253 B2 JP H0420253B2 JP 11993284 A JP11993284 A JP 11993284A JP 11993284 A JP11993284 A JP 11993284A JP H0420253 B2 JPH0420253 B2 JP H0420253B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- quartz
- gas
- heat treatment
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 68
- 239000010453 quartz Substances 0.000 description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 40
- 239000007789 gas Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000005339 levitation Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 tungsten halogen Chemical class 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11993284A JPS611017A (ja) | 1984-06-13 | 1984-06-13 | 半導体基板の熱処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11993284A JPS611017A (ja) | 1984-06-13 | 1984-06-13 | 半導体基板の熱処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS611017A JPS611017A (ja) | 1986-01-07 |
| JPH0420253B2 true JPH0420253B2 (enrdf_load_stackoverflow) | 1992-04-02 |
Family
ID=14773734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11993284A Granted JPS611017A (ja) | 1984-06-13 | 1984-06-13 | 半導体基板の熱処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS611017A (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2163388T3 (es) * | 1988-05-24 | 2002-02-01 | Unaxis Balzers Ag | Instalacion de vacio. |
| JPH0622980Y2 (ja) * | 1988-09-28 | 1994-06-15 | 日本エー・エス・エム株式会社 | Ｃｖｄ装置における基板支持装置 |
| JPH073640Y2 (ja) * | 1989-12-20 | 1995-01-30 | 日本真空技術株式会社 | 加熱ランプ付搬送室 |
| JPH09181155A (ja) * | 1995-09-29 | 1997-07-11 | Applied Materials Inc | 堆積装置のサセプタ |
| US6067931A (en) * | 1996-11-04 | 2000-05-30 | General Electric Company | Thermal processor for semiconductor wafers |
| US6449428B2 (en) * | 1998-12-11 | 2002-09-10 | Mattson Technology Corp. | Gas driven rotating susceptor for rapid thermal processing (RTP) system |
| KR100434019B1 (ko) * | 2001-06-30 | 2004-06-04 | 동부전자 주식회사 | 히터 블록에 장착되는 스핀들포크 어셈블리 |
| DE10260672A1 (de) | 2002-12-23 | 2004-07-15 | Mattson Thermal Products Gmbh | Verfahren und Vorrichtung zum thermischen Behandeln von scheibenförmigen Substraten |
-
1984
- 1984-06-13 JP JP11993284A patent/JPS611017A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS611017A (ja) | 1986-01-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6805749B2 (en) | Method and apparatus for supporting a semiconductor wafer during processing | |
| KR0155545B1 (ko) | 기판의 열처리 장치 | |
| US3627590A (en) | Method for heat treatment of workpieces | |
| EP0910868B1 (en) | Method and apparatus for contactless treatment of a semiconductor substrate in wafer form | |
| US4493977A (en) | Method for heating semiconductor wafers by a light-radiant heating furnace | |
| CN101978481B (zh) | 热处理腔室中的晶片支撑件的温度测量及控制 | |
| KR101997961B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
| EP3329510B1 (en) | Rotating substrate laser anneal | |
| JP2014157968A (ja) | 熱処理方法、熱処理装置およびサセプター | |
| KR101601341B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
| EP0902962B1 (en) | Apparatus for plasma jet treatment of substrates | |
| TW201903903A (zh) | 熱處理方法 | |
| KR20120011878A (ko) | 가스 공급부를 갖는 석영 윈도우 및 이를 통합하는 프로세싱 장비 | |
| JP2008042127A (ja) | 熱処理装置および熱処理用サセプタ | |
| JPH0420253B2 (enrdf_load_stackoverflow) | ||
| KR20140026307A (ko) | 웨이퍼 형상 물품의 액체 처리를 위한 방법 및 장치 | |
| US5626680A (en) | Thermal processing apparatus and process | |
| JP2008112801A (ja) | ピンホルダおよび基板処理装置 | |
| JPH0855898A (ja) | 堆積装置用サセプタ | |
| TW202021011A (zh) | 用於流體支撐基板的光學透明基座 | |
| JP2010073787A (ja) | 熱処理装置 | |
| JPH05198514A (ja) | 枚葉型エピタキシャル成長装置 | |
| JPH1097999A (ja) | 加熱装置、処理装置、加熱方法及び処理方法 | |
| JPH07254557A (ja) | 半導体ウェハの加熱・冷却方法及び加熱・冷却装置 | |
| JPH04216619A (ja) | 半導体製造装置 |