JPS636834A - 選択エピタキシヤル成長方法 - Google Patents

選択エピタキシヤル成長方法

Info

Publication number
JPS636834A
JPS636834A JP61148283A JP14828386A JPS636834A JP S636834 A JPS636834 A JP S636834A JP 61148283 A JP61148283 A JP 61148283A JP 14828386 A JP14828386 A JP 14828386A JP S636834 A JPS636834 A JP S636834A
Authority
JP
Japan
Prior art keywords
layer
single crystal
substrate
region
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61148283A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0530296B2 (enExample
Inventor
Koichiro Kotani
小谷　紘一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61148283A priority Critical patent/JPS636834A/ja
Publication of JPS636834A publication Critical patent/JPS636834A/ja
Publication of JPH0530296B2 publication Critical patent/JPH0530296B2/ja
Granted legal-status Critical Current

Links

JP61148283A 1986-06-26 1986-06-26 選択エピタキシヤル成長方法 Granted JPS636834A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61148283A JPS636834A (ja) 1986-06-26 1986-06-26 選択エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61148283A JPS636834A (ja) 1986-06-26 1986-06-26 選択エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS636834A true JPS636834A (ja) 1988-01-12
JPH0530296B2 JPH0530296B2 (enExample) 1993-05-07

Family

ID=15449300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61148283A Granted JPS636834A (ja) 1986-06-26 1986-06-26 選択エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS636834A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980312A (en) * 1989-02-27 1990-12-25 U.S. Philips Corporation Method of manufacturing a semiconductor device having a mesa structure
JP2011171639A (ja) * 2010-02-22 2011-09-01 Sanken Electric Co Ltd 半導体装置、半導体ウェハ、半導体装置の製造方法及び半導体ウェハの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980312A (en) * 1989-02-27 1990-12-25 U.S. Philips Corporation Method of manufacturing a semiconductor device having a mesa structure
JP2011171639A (ja) * 2010-02-22 2011-09-01 Sanken Electric Co Ltd 半導体装置、半導体ウェハ、半導体装置の製造方法及び半導体ウェハの製造方法

Also Published As

Publication number Publication date
JPH0530296B2 (enExample) 1993-05-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term