JPS6367332B2 - - Google Patents

Info

Publication number
JPS6367332B2
JPS6367332B2 JP1898681A JP1898681A JPS6367332B2 JP S6367332 B2 JPS6367332 B2 JP S6367332B2 JP 1898681 A JP1898681 A JP 1898681A JP 1898681 A JP1898681 A JP 1898681A JP S6367332 B2 JPS6367332 B2 JP S6367332B2
Authority
JP
Japan
Prior art keywords
plasma
sample
chamber
magnetic
plasma generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1898681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57133636A (en
Inventor
Seitaro Matsuo
Hideo Yoshihara
Shinichi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1898681A priority Critical patent/JPS57133636A/ja
Priority to CA000375908A priority patent/CA1159012A/en
Priority to US06/257,616 priority patent/US4401054A/en
Priority to DE3117252A priority patent/DE3117252C2/de
Priority to FR8108726A priority patent/FR2481838A1/fr
Priority to GB8113505A priority patent/GB2076587B/en
Priority to NL8102172A priority patent/NL191267C/xx
Publication of JPS57133636A publication Critical patent/JPS57133636A/ja
Publication of JPS6367332B2 publication Critical patent/JPS6367332B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP1898681A 1980-05-02 1981-02-13 Film forming device utilizing plasma at low temperature Granted JPS57133636A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP1898681A JPS57133636A (en) 1981-02-13 1981-02-13 Film forming device utilizing plasma at low temperature
CA000375908A CA1159012A (en) 1980-05-02 1981-04-22 Plasma deposition apparatus
US06/257,616 US4401054A (en) 1980-05-02 1981-04-27 Plasma deposition apparatus
DE3117252A DE3117252C2 (de) 1980-05-02 1981-04-30 Plasmaauftragvorrichtung
FR8108726A FR2481838A1 (fr) 1980-05-02 1981-04-30 Appareil de depot de plasma pour former une pellicule sur un substrat
GB8113505A GB2076587B (en) 1980-05-02 1981-05-01 Plasma deposition apparatus
NL8102172A NL191267C (nl) 1980-05-02 1981-05-01 Inrichting voor het met plasma bewerken van een substraat.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1898681A JPS57133636A (en) 1981-02-13 1981-02-13 Film forming device utilizing plasma at low temperature

Publications (2)

Publication Number Publication Date
JPS57133636A JPS57133636A (en) 1982-08-18
JPS6367332B2 true JPS6367332B2 (OSRAM) 1988-12-26

Family

ID=11986903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1898681A Granted JPS57133636A (en) 1980-05-02 1981-02-13 Film forming device utilizing plasma at low temperature

Country Status (1)

Country Link
JP (1) JPS57133636A (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115235A (ja) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体基板上への絶縁膜形成方法
JPS60116780A (ja) * 1983-11-28 1985-06-24 Kyocera Corp 高硬度窒化ホウ素膜の製造方法
JPS60116781A (ja) * 1983-11-28 1985-06-24 Kyocera Corp 高硬度窒化ホウ素膜の製造方法
JPH0638401B2 (ja) * 1984-08-13 1994-05-18 日本電信電話株式会社 半導体薄膜形成法
JPH0616496B2 (ja) * 1986-09-24 1994-03-02 日本電気株式会社 励起種ｃｖｄ装置
JPH066786B2 (ja) * 1987-03-17 1994-01-26 日本電信電話株式会社 薄膜形成装置
JPS6455871A (en) * 1987-08-26 1989-03-02 Sumitomo Electric Industries Manufacture of self-alignment type gate electrode
JPH01198478A (ja) * 1988-02-01 1989-08-10 Canon Inc マイクロ波プラズマｃｖｄ装置
EP0406690B1 (en) * 1989-06-28 1997-03-12 Canon Kabushiki Kaisha Process for continuously forming a large area functional deposited film by microwave PCVD method and an apparatus suitable for practicing the same
JP2714247B2 (ja) * 1990-10-29 1998-02-16 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置
JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
JP2810532B2 (ja) * 1990-11-29 1998-10-15 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP3101330B2 (ja) * 1991-01-23 2000-10-23 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置
US6096389A (en) * 1995-09-14 2000-08-01 Canon Kabushiki Kaisha Method and apparatus for forming a deposited film using a microwave CVD process
US10431429B2 (en) * 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
JP6963848B2 (ja) * 2018-06-14 2021-11-10 株式会社エスイー 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法
JP6795143B2 (ja) * 2018-06-14 2020-12-02 株式会社エスイー 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法

Also Published As

Publication number Publication date
JPS57133636A (en) 1982-08-18

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