JPS6366433B2 - - Google Patents
Info
- Publication number
- JPS6366433B2 JPS6366433B2 JP56074534A JP7453481A JPS6366433B2 JP S6366433 B2 JPS6366433 B2 JP S6366433B2 JP 56074534 A JP56074534 A JP 56074534A JP 7453481 A JP7453481 A JP 7453481A JP S6366433 B2 JPS6366433 B2 JP S6366433B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- electrode
- floating
- variable capacitance
- floating electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56074534A JPS57188886A (en) | 1981-05-18 | 1981-05-18 | Multiple semiconductor variable capacitance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56074534A JPS57188886A (en) | 1981-05-18 | 1981-05-18 | Multiple semiconductor variable capacitance element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57188886A JPS57188886A (en) | 1982-11-19 |
| JPS6366433B2 true JPS6366433B2 (enExample) | 1988-12-20 |
Family
ID=13550047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56074534A Granted JPS57188886A (en) | 1981-05-18 | 1981-05-18 | Multiple semiconductor variable capacitance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57188886A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040206999A1 (en) * | 2002-05-09 | 2004-10-21 | Impinj, Inc., A Delaware Corporation | Metal dielectric semiconductor floating gate variable capacitor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53115185A (en) * | 1977-03-17 | 1978-10-07 | Sanyo Electric Co Ltd | Memory type variable capacitive device |
-
1981
- 1981-05-18 JP JP56074534A patent/JPS57188886A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57188886A (en) | 1982-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2826149B2 (ja) | コンデンサ構造とモノリシック電圧掛算器 | |
| EP0112670B1 (en) | Semiconductor memory device having stacked capacitor-tape memory cells | |
| US4456917A (en) | Variable capacitor | |
| EP0633612A2 (en) | Fast charging MOS capacitor structure for high magnitude voltage of either positive or negative polarity | |
| JP2004228188A (ja) | 半導体装置 | |
| EP2351078B1 (en) | Shielding for integrated capacitors | |
| JPS63228659A (ja) | 信号転送回路網の集積構造 | |
| JPS63308366A (ja) | 半導体集積回路 | |
| US4704625A (en) | Capacitor with reduced voltage variability | |
| EP0137257B1 (en) | Resistive gate field effect transistor logic family | |
| JPH02166764A (ja) | 容量素子を有する半導体装置およびその製造方法 | |
| JPS6366433B2 (enExample) | ||
| JPH0396267A (ja) | 半導体集積回路装置 | |
| JPH0473960A (ja) | 半導体集積回路 | |
| JP2713409B2 (ja) | 相補soi型横方向絶縁ゲート整流器 | |
| JP2563456B2 (ja) | Mis型容量素子 | |
| JPH06132477A (ja) | Mosコンデンサを有する半導体装置 | |
| JPS63108763A (ja) | 半導体集積回路 | |
| JPH1197626A (ja) | 半導体装置 | |
| JPS6395657A (ja) | 半導体記憶装置 | |
| JPH0142149B2 (enExample) | ||
| JPS6190455A (ja) | キヤパシタ | |
| JPS62163358A (ja) | 自己回復型mosキヤパシタ | |
| JPS60137053A (ja) | 半導体容量素子 | |
| JPH027189B2 (enExample) |