JPS6366060B2 - - Google Patents
Info
- Publication number
- JPS6366060B2 JPS6366060B2 JP9494887A JP9494887A JPS6366060B2 JP S6366060 B2 JPS6366060 B2 JP S6366060B2 JP 9494887 A JP9494887 A JP 9494887A JP 9494887 A JP9494887 A JP 9494887A JP S6366060 B2 JPS6366060 B2 JP S6366060B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- polycrystalline silicon
- metal
- wiring layer
- metal wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 25
- 239000010410 layer Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9494887A JPS63132455A (ja) | 1987-04-17 | 1987-04-17 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9494887A JPS63132455A (ja) | 1987-04-17 | 1987-04-17 | 半導体集積回路装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10866380A Division JPS5732654A (en) | 1980-08-07 | 1980-08-07 | Semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63132455A JPS63132455A (ja) | 1988-06-04 |
| JPS6366060B2 true JPS6366060B2 (en, 2012) | 1988-12-19 |
Family
ID=14124166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9494887A Granted JPS63132455A (ja) | 1987-04-17 | 1987-04-17 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63132455A (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2869978B2 (ja) * | 1988-09-26 | 1999-03-10 | 日本電気株式会社 | 半導体装置 |
-
1987
- 1987-04-17 JP JP9494887A patent/JPS63132455A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63132455A (ja) | 1988-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3987847B2 (ja) | Ｍｉｍ構造抵抗体を搭載した半導体装置 | |
| JP3116360B2 (ja) | 自己整合型コンタクトホールの形成方法及び半導体装置 | |
| JP2578577B2 (ja) | コンタクトホール形成方法 | |
| JPH05175337A (ja) | Ｖｌｓｉ回路の導体路配置 | |
| US6429521B1 (en) | Semiconductor integrated circuit device and its manufacturing method | |
| JP3109478B2 (ja) | 半導体装置 | |
| JPS6127907B2 (en, 2012) | ||
| JP2752863B2 (ja) | 半導体装置 | |
| JPS6366060B2 (en, 2012) | ||
| US10665544B2 (en) | Semiconductor device including conductive patterns | |
| JPS63240045A (ja) | 半導体装置 | |
| US6445071B1 (en) | Semiconductor device having an improved multi-layer interconnection structure and manufacturing method thereof | |
| JP2508831B2 (ja) | 半導体装置 | |
| KR100200687B1 (ko) | 새로운 패드층을 구비하는 반도체장치 | |
| JPH1093038A (ja) | 半導体記憶装置およびその製造方法 | |
| WO2022052558A1 (zh) | 半导体结构及其制作方法 | |
| JPH07106514A (ja) | 半導体集積回路装置 | |
| JP2692401B2 (ja) | 薄膜コンデンサ | |
| JP3107005B2 (ja) | 半導体集積回路装置 | |
| JPS6340347A (ja) | 半導体集積回路装置 | |
| JP2869978B2 (ja) | 半導体装置 | |
| JPS6148779B2 (en, 2012) | ||
| US6278151B1 (en) | Semiconductor device having wiring detour around step | |
| KR100198635B1 (ko) | 반도체 소자의 금속 배선 형성 방법 | |
| JPH05343546A (ja) | 半導体集積回路 |