JPS6364770U - - Google Patents
Info
- Publication number
- JPS6364770U JPS6364770U JP15755286U JP15755286U JPS6364770U JP S6364770 U JPS6364770 U JP S6364770U JP 15755286 U JP15755286 U JP 15755286U JP 15755286 U JP15755286 U JP 15755286U JP S6364770 U JPS6364770 U JP S6364770U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- disk
- ion
- ion implantation
- buffer stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 claims 3
- 230000007723 transport mechanism Effects 0.000 claims 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
第１図はこの考案の一実施例を示す平断面図、
第２図は一部の断面図、第３図は従来例の平断面
図である。
１…ターゲツトチヤンバ、２…真空予備室、３
…ウエハー、４…デイスク、５，６…搬送機構（
搬送アーム）、１５…位置合せ機構、１３，１４
…バツフアステージ。
FIG. 1 is a plan sectional view showing an embodiment of this invention.
FIG. 2 is a partial sectional view, and FIG. 3 is a plan sectional view of a conventional example. 1...Target chamber, 2...Vacuum preliminary chamber, 3
...Wafer, 4...Disk, 5, 6...Transfer mechanism (
transport arm), 15... positioning mechanism, 13, 14
...Batsuhua Stage.
Claims (1)
るデイスクを備えたターゲツトチヤンバと、前記
ターゲツトチヤンバに連結されてあり、内部にウ
エハーが収納される予備真空室とからなるイオン
注入装置において、前記デイスクに装着されたウ
エハーをイオン注入処理している間、少なくとも
次に処理しようとするウエハーを位置合せして貯
えておくバツフアステージを設け、前記バツフア
ステージに貯えられたウエハーを、次に処理する
ときに順次前記デイスクに搬送する搬送機構を設
けてなるイオン注入装置。 An ion implantation apparatus comprising a target chamber having a disk therein on which a wafer to be ion-implanted is mounted, and a preliminary vacuum chamber connected to the target chamber and housing the wafer therein. While ion implantation is being performed on a wafer mounted on a disk, a buffer stage is provided to align and store at least the next wafer to be processed, and the wafer stored in the buffer stage is then An ion implantation apparatus provided with a transport mechanism for sequentially transporting the ion to the disk during processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15755286U JPS6364770U (en) | 1986-10-15 | 1986-10-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15755286U JPS6364770U (en) | 1986-10-15 | 1986-10-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6364770U true JPS6364770U (en) | 1988-04-28 |
Family
ID=31080205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15755286U Pending JPS6364770U (en) | 1986-10-15 | 1986-10-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6364770U (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5763676A (en) * | 1980-10-03 | 1982-04-17 | Hitachi Ltd | Continuous sputtering device |
| JPS5763677A (en) * | 1980-10-03 | 1982-04-17 | Hitachi Ltd | Continuous vacuum treating device |
| JPS59100522A (en) * | 1982-11-30 | 1984-06-09 | Kokusai Electric Co Ltd | Automatically sputtering device for formation of thin film |
| JPS61113766A (en) * | 1984-11-09 | 1986-05-31 | Nissin Electric Co Ltd | End station |
| JPS61113767A (en) * | 1984-11-09 | 1986-05-31 | Nissin Electric Co Ltd | End station |
| JPS6244571A (en) * | 1985-08-20 | 1987-02-26 | Toshiba Mach Co Ltd | Ion implantation device |
-
1986
- 1986-10-15 JP JP15755286U patent/JPS6364770U/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5763676A (en) * | 1980-10-03 | 1982-04-17 | Hitachi Ltd | Continuous sputtering device |
| JPS5763677A (en) * | 1980-10-03 | 1982-04-17 | Hitachi Ltd | Continuous vacuum treating device |
| JPS59100522A (en) * | 1982-11-30 | 1984-06-09 | Kokusai Electric Co Ltd | Automatically sputtering device for formation of thin film |
| JPS61113766A (en) * | 1984-11-09 | 1986-05-31 | Nissin Electric Co Ltd | End station |
| JPS61113767A (en) * | 1984-11-09 | 1986-05-31 | Nissin Electric Co Ltd | End station |
| JPS6244571A (en) * | 1985-08-20 | 1987-02-26 | Toshiba Mach Co Ltd | Ion implantation device |
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