JPS61133556U

JPS61133556U -

Info

Publication number: JPS61133556U
Application number: JP1741685U
Authority: JP
Priority date: 1985-02-09
Filing date: 1985-02-09
Publication date: 1986-08-20

Description

[Brief explanation of the drawing]

第１図は、この考案の一実施例に係るイオン蒸
着薄膜形成装置を示す概略図である。第２図は、
第１図の線―方向に見た概略平面図である。
第３図は、この考案の背景となるイオン蒸着薄膜
形成装置の一例を示す概略図である。２…蒸発源、３…イオン源、４…デイスク、５
…デイスク駆動装置、６…ウエハ搬送装置、１２
…ウエハ、Ｓ…処理面。 FIG. 1 is a schematic diagram showing an ion vapor deposition thin film forming apparatus according to an embodiment of this invention. Figure 2 shows
FIG. 2 is a schematic plan view taken along the line in FIG. 1;
FIG. 3 is a schematic diagram showing an example of an ion vapor deposition thin film forming apparatus which is the background of this invention. 2... Evaporation source, 3... Ion source, 4... Disk, 5
...Disk drive device, 6...Wafer transfer device, 12
...Wafer, S...Processing surface.

Claims

[Scope of utility model registration request]

In an ion evaporation thin film forming apparatus that has an ion source and an evaporation source and performs ion irradiation and vapor deposition on each of a plurality of wafers mounted on a disk that rotates and translates in a vacuum, the wafer is placed on the processing surface. Ion evaporation thin film formation characterized by comprising: a wafer transport device that transports the wafer facing upward and attaches it to the disk; and a disk drive device that rotates the disk so that the processing surface of the wafer faces an ion source and an evaporation source. Device.