JPS5763676A - Continuous sputtering device - Google Patents

Continuous sputtering device

Info

Publication number
JPS5763676A
JPS5763676A JP13780280A JP13780280A JPS5763676A JP S5763676 A JPS5763676 A JP S5763676A JP 13780280 A JP13780280 A JP 13780280A JP 13780280 A JP13780280 A JP 13780280A JP S5763676 A JPS5763676 A JP S5763676A
Authority
JP
Japan
Prior art keywords
chamber
contained
substrates
transferred
take
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13780280A
Other languages
Japanese (ja)
Inventor
Hideki Tateishi
Tsuneaki Kamei
Katsuo Abe
Hide Kobayashi
Susumu Aiuchi
Masashi Nakatsuka
Nobuyuki Takahashi
Ryuji Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Hitachi Ltd
Original Assignee
Hitachi Ltd
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Anelva Corp filed Critical Hitachi Ltd
Priority to JP13780280A priority Critical patent/JPS5763676A/en
Priority to US06/296,314 priority patent/US4405435A/en
Publication of JPS5763676A publication Critical patent/JPS5763676A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To improve productivity and film quality by connecting gas discharge means at the intermediate of the inserting chamber and treating chamber for substrates to be trated, and at the intermediate of the treating chamber and a take-out chamber, and providing intermediate containing chambers provided respectively with specific mechanisms. CONSTITUTION:While an inserting chamber 5 is re-evacuated by an evacuating pump 6, plural sheets of the substrates contained in an intermediate containing chamber 21 are fed successively into a sputtering chamber 1 by a conveying mechanism and are formed with desired films, after which they are contained in an intermediate containing chamber 22. After the total number of the substrates contained in the chamber 1 are fully contained in the chamber 22 after the sputter treatment, the sealing valves 26, 27 provided at both ends of the sputtering chamber are closed. Thence, the sealing valve 28 provided at the intermediate of the chamber 22 and a take-out chamber 7 is opened, and the treated substrates 4 contained in the chamber 22 are transferred into the chamber 7. At this time, plural sheets of the substrates 4 contained in the chamber 5 kept already under the prescribed pressure are transferred into the chamber 21 by opening the valve 25. The above-mentioned operations are repeated.
JP13780280A 1980-08-27 1980-10-03 Continuous sputtering device Pending JPS5763676A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP13780280A JPS5763676A (en) 1980-10-03 1980-10-03 Continuous sputtering device
US06/296,314 US4405435A (en) 1980-08-27 1981-08-26 Apparatus for performing continuous treatment in vacuum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13780280A JPS5763676A (en) 1980-10-03 1980-10-03 Continuous sputtering device

Publications (1)

Publication Number Publication Date
JPS5763676A true JPS5763676A (en) 1982-04-17

Family

ID=15207184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13780280A Pending JPS5763676A (en) 1980-08-27 1980-10-03 Continuous sputtering device

Country Status (1)

Country Link
JP (1) JPS5763676A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498832A (en) * 1982-05-21 1985-02-12 The Boc Group, Inc. Workpiece accumulating and transporting apparatus
JPS6364770U (en) * 1986-10-15 1988-04-28
JPS6431971A (en) * 1987-07-28 1989-02-02 Tokuda Seisakusho Vacuum treatment device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4498832A (en) * 1982-05-21 1985-02-12 The Boc Group, Inc. Workpiece accumulating and transporting apparatus
JPS6364770U (en) * 1986-10-15 1988-04-28
JPS6431971A (en) * 1987-07-28 1989-02-02 Tokuda Seisakusho Vacuum treatment device
JPH0242901B2 (en) * 1987-07-28 1990-09-26

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