JPS6361789B2 - - Google Patents
Info
- Publication number
- JPS6361789B2 JPS6361789B2 JP58240967A JP24096783A JPS6361789B2 JP S6361789 B2 JPS6361789 B2 JP S6361789B2 JP 58240967 A JP58240967 A JP 58240967A JP 24096783 A JP24096783 A JP 24096783A JP S6361789 B2 JPS6361789 B2 JP S6361789B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- layer
- depth
- diffusion layer
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58240967A JPS60133763A (ja) | 1983-12-22 | 1983-12-22 | 可変容量ダイオ−ドおよびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58240967A JPS60133763A (ja) | 1983-12-22 | 1983-12-22 | 可変容量ダイオ−ドおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60133763A JPS60133763A (ja) | 1985-07-16 |
JPS6361789B2 true JPS6361789B2 (enrdf_load_stackoverflow) | 1988-11-30 |
Family
ID=17067313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58240967A Granted JPS60133763A (ja) | 1983-12-22 | 1983-12-22 | 可変容量ダイオ−ドおよびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60133763A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0481387U (enrdf_load_stackoverflow) * | 1990-11-22 | 1992-07-15 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2978499B2 (ja) * | 1988-12-06 | 1999-11-15 | ソニー株式会社 | バリキャップダイオードの製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4839168A (enrdf_load_stackoverflow) * | 1971-09-22 | 1973-06-08 | ||
JPS4879578A (enrdf_load_stackoverflow) * | 1972-01-24 | 1973-10-25 | ||
JPS5550671A (en) * | 1978-10-09 | 1980-04-12 | Sanyo Electric Co Ltd | Manufacturing of variable capacitance element |
-
1983
- 1983-12-22 JP JP58240967A patent/JPS60133763A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0481387U (enrdf_load_stackoverflow) * | 1990-11-22 | 1992-07-15 |
Also Published As
Publication number | Publication date |
---|---|
JPS60133763A (ja) | 1985-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3906076B2 (ja) | 半導体装置 | |
US4357622A (en) | Complementary transistor structure | |
US5429972A (en) | Method of fabricating a capacitor with a textured polysilicon interface and an enhanced dielectric | |
JP3199452B2 (ja) | Pnp装置用p埋め込み層の製造方法 | |
CN111710729A (zh) | 齐纳二极管及其制造方法 | |
US4485552A (en) | Complementary transistor structure and method for manufacture | |
US4473941A (en) | Method of fabricating zener diodes | |
US5838027A (en) | Semiconductor device and a method for manufacturing the same | |
US4362574A (en) | Integrated circuit and manufacturing method | |
JP2997377B2 (ja) | 半導体装置及びその製造方法 | |
GB1577405A (en) | High-frequency transistors | |
US4101349A (en) | Integrated injection logic structure fabricated by outdiffusion and epitaxial deposition | |
US5024955A (en) | Variable-capacitance diode element having wide capacitance variation range | |
JPS62113471A (ja) | バイポ−ラトランジスタに浅く、大量にド−プされた外因性ベ−ス領域を形成する方法 | |
JPS6361789B2 (enrdf_load_stackoverflow) | ||
JP4000927B2 (ja) | 半導体装置およびその製造方法 | |
JP5072146B2 (ja) | 可変容量ダイオード及びその製造方法 | |
KR100299912B1 (ko) | 절연 게이트 바이폴라 트랜지스터의 제조 방법 | |
JPS5821866A (ja) | 半導体装置 | |
JP2729870B2 (ja) | 可変容量ダイオードとその製造方法 | |
JP2852241B2 (ja) | 半導体装置及びその製造方法 | |
JP3355334B2 (ja) | 可変容量ダイオードの製造方法 | |
JPH06105788B2 (ja) | 砒化ガリウム超階段バラクタダイオ−ドの製造方法 | |
KR940004258B1 (ko) | 소이구조의 반도체 소자 제조방법 | |
JPS63148684A (ja) | 超階段形バラクタダイオ−ド |