JPS6361786B2 - - Google Patents

Info

Publication number
JPS6361786B2
JPS6361786B2 JP57159151A JP15915182A JPS6361786B2 JP S6361786 B2 JPS6361786 B2 JP S6361786B2 JP 57159151 A JP57159151 A JP 57159151A JP 15915182 A JP15915182 A JP 15915182A JP S6361786 B2 JPS6361786 B2 JP S6361786B2
Authority
JP
Japan
Prior art keywords
region
type
semiconductor device
glass
mesa groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57159151A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5947765A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57159151A priority Critical patent/JPS5947765A/ja
Publication of JPS5947765A publication Critical patent/JPS5947765A/ja
Publication of JPS6361786B2 publication Critical patent/JPS6361786B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)
JP57159151A 1982-09-10 1982-09-10 半導体装置 Granted JPS5947765A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57159151A JPS5947765A (ja) 1982-09-10 1982-09-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57159151A JPS5947765A (ja) 1982-09-10 1982-09-10 半導体装置

Publications (2)

Publication Number Publication Date
JPS5947765A JPS5947765A (ja) 1984-03-17
JPS6361786B2 true JPS6361786B2 (enrdf_load_stackoverflow) 1988-11-30

Family

ID=15687372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57159151A Granted JPS5947765A (ja) 1982-09-10 1982-09-10 半導体装置

Country Status (1)

Country Link
JP (1) JPS5947765A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08102342A (ja) * 1994-09-30 1996-04-16 Japan Aviation Electron Ind Ltd 回路基板とフレキシブルケーブルとの接続構造

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08102342A (ja) * 1994-09-30 1996-04-16 Japan Aviation Electron Ind Ltd 回路基板とフレキシブルケーブルとの接続構造

Also Published As

Publication number Publication date
JPS5947765A (ja) 1984-03-17

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