JPH0435898B2 - - Google Patents

Info

Publication number
JPH0435898B2
JPH0435898B2 JP57062900A JP6290082A JPH0435898B2 JP H0435898 B2 JPH0435898 B2 JP H0435898B2 JP 57062900 A JP57062900 A JP 57062900A JP 6290082 A JP6290082 A JP 6290082A JP H0435898 B2 JPH0435898 B2 JP H0435898B2
Authority
JP
Japan
Prior art keywords
substrate
epitaxial layer
semiconductor substrate
warpage
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57062900A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58180018A (ja
Inventor
Kunio Yajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP6290082A priority Critical patent/JPS58180018A/ja
Publication of JPS58180018A publication Critical patent/JPS58180018A/ja
Publication of JPH0435898B2 publication Critical patent/JPH0435898B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP6290082A 1982-04-14 1982-04-14 半導体基板の製造方法 Granted JPS58180018A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6290082A JPS58180018A (ja) 1982-04-14 1982-04-14 半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6290082A JPS58180018A (ja) 1982-04-14 1982-04-14 半導体基板の製造方法

Publications (2)

Publication Number Publication Date
JPS58180018A JPS58180018A (ja) 1983-10-21
JPH0435898B2 true JPH0435898B2 (enrdf_load_stackoverflow) 1992-06-12

Family

ID=13213581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6290082A Granted JPS58180018A (ja) 1982-04-14 1982-04-14 半導体基板の製造方法

Country Status (1)

Country Link
JP (1) JPS58180018A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147522A (ja) * 1984-12-20 1986-07-05 Sanyo Electric Co Ltd 半導体基板の製造方法
FR2661040A1 (fr) * 1990-04-13 1991-10-18 Thomson Csf Procede d'adaptation entre deux materiaux semiconducteurs cristallises, et dispositif semiconducteur.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5162974A (en) * 1974-11-29 1976-05-31 Matsushita Electronics Corp Handotaisochino seizohoho

Also Published As

Publication number Publication date
JPS58180018A (ja) 1983-10-21

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