JPS6360896B2 - - Google Patents
Info
- Publication number
- JPS6360896B2 JPS6360896B2 JP91081A JP91081A JPS6360896B2 JP S6360896 B2 JPS6360896 B2 JP S6360896B2 JP 91081 A JP91081 A JP 91081A JP 91081 A JP91081 A JP 91081A JP S6360896 B2 JPS6360896 B2 JP S6360896B2
- Authority
- JP
- Japan
- Prior art keywords
- developer
- development
- absorption
- metal
- free
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000011161 development Methods 0.000 claims description 38
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 16
- 239000007921 spray Substances 0.000 description 15
- 239000003795 chemical substances by application Substances 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 13
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 8
- 238000000862 absorption spectrum Methods 0.000 description 8
- 229910002092 carbon dioxide Inorganic materials 0.000 description 8
- 239000001569 carbon dioxide Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- -1 amine compounds Chemical class 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000002189 fluorescence spectrum Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 3
- 238000000695 excitation spectrum Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- YPKJPFXVPWGYJL-UHFFFAOYSA-N naphthalene-1,4-dione;sulfuryl dichloride;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].ClS(Cl)(=O)=O.C1=CC=C2C(=O)C=CC(=O)C2=C1 YPKJPFXVPWGYJL-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- PGAPATLGJSQQBU-UHFFFAOYSA-M thallium(i) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 description 1
- CMJCEVKJYRZMIA-UHFFFAOYSA-M thallium(i) iodide Chemical compound [Tl]I CMJCEVKJYRZMIA-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP91081A JPS57114141A (en) | 1981-01-06 | 1981-01-06 | Increasing method for developing power of developer for positive type photosensitive resin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP91081A JPS57114141A (en) | 1981-01-06 | 1981-01-06 | Increasing method for developing power of developer for positive type photosensitive resin |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57114141A JPS57114141A (en) | 1982-07-15 |
| JPS6360896B2 true JPS6360896B2 (enExample) | 1988-11-25 |
Family
ID=11486825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP91081A Granted JPS57114141A (en) | 1981-01-06 | 1981-01-06 | Increasing method for developing power of developer for positive type photosensitive resin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57114141A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59182444A (ja) * | 1983-04-01 | 1984-10-17 | Sumitomo Chem Co Ltd | ポジ型フオトレジストの改良現像液 |
| JPS59219743A (ja) * | 1983-05-28 | 1984-12-11 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト現像液 |
| JPS60254043A (ja) * | 1984-05-30 | 1985-12-14 | Yotsukaichi Gosei Kk | ポジ型感光材料用現像剤 |
| JP2530812B2 (ja) * | 1985-12-12 | 1996-09-04 | 富士電機株式会社 | 高周波誘導加熱装置 |
| EP0256031B1 (en) * | 1986-01-29 | 1992-03-04 | Hughes Aircraft Company | Method for developing poly(methacrylic anhydride) resists |
| JP2553048B2 (ja) * | 1986-07-02 | 1996-11-13 | 三井東圧化学株式会社 | レジスト膜の形成方法 |
| EP0286272B1 (en) * | 1987-04-06 | 1994-01-12 | Hoechst Celanese Corporation | High contrast, positive photoresist developer containing alkanolamine |
| US5094934A (en) * | 1987-04-06 | 1992-03-10 | Morton International, Inc. | Method of developing a high contrast, positive photoresist using a developer containing alkanolamine |
| JP2733952B2 (ja) * | 1988-05-02 | 1998-03-30 | 大日本インキ化学工業株式会社 | 現像液組成物 |
| JPH02151866A (ja) * | 1988-11-21 | 1990-06-11 | Macdermid Inc | フォトレジスト現像液 |
-
1981
- 1981-01-06 JP JP91081A patent/JPS57114141A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57114141A (en) | 1982-07-15 |
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