JPS6357953B2 - - Google Patents

Info

Publication number
JPS6357953B2
JPS6357953B2 JP57078852A JP7885282A JPS6357953B2 JP S6357953 B2 JPS6357953 B2 JP S6357953B2 JP 57078852 A JP57078852 A JP 57078852A JP 7885282 A JP7885282 A JP 7885282A JP S6357953 B2 JPS6357953 B2 JP S6357953B2
Authority
JP
Japan
Prior art keywords
electrode
thin film
conductive substrate
semiconductor layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57078852A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58196061A (ja
Inventor
Yutaka Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP57078852A priority Critical patent/JPS58196061A/ja
Priority to US06/492,675 priority patent/US4570332A/en
Priority to DE19833317108 priority patent/DE3317108A1/de
Publication of JPS58196061A publication Critical patent/JPS58196061A/ja
Publication of JPS6357953B2 publication Critical patent/JPS6357953B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57078852A 1982-05-10 1982-05-10 薄膜半導体装置の電極形成方法 Granted JPS58196061A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57078852A JPS58196061A (ja) 1982-05-10 1982-05-10 薄膜半導体装置の電極形成方法
US06/492,675 US4570332A (en) 1982-05-10 1983-05-09 Method of forming contact to thin film semiconductor device
DE19833317108 DE3317108A1 (de) 1982-05-10 1983-05-10 Duennfilm-halbleiterbauteil

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57078852A JPS58196061A (ja) 1982-05-10 1982-05-10 薄膜半導体装置の電極形成方法

Publications (2)

Publication Number Publication Date
JPS58196061A JPS58196061A (ja) 1983-11-15
JPS6357953B2 true JPS6357953B2 (enrdf_load_stackoverflow) 1988-11-14

Family

ID=13673352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57078852A Granted JPS58196061A (ja) 1982-05-10 1982-05-10 薄膜半導体装置の電極形成方法

Country Status (1)

Country Link
JP (1) JPS58196061A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
JP2632736B2 (ja) * 1990-03-12 1997-07-23 シャープ株式会社 薄膜半導体装置
FR2795667B1 (fr) * 1999-07-02 2001-10-12 Essilor Int Outil de lissage pour surface optique, en particulier pour lentille ophtalmique
DE102007011403A1 (de) 2007-03-08 2008-09-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Frontseitig serienverschaltetes Solarmodul

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132504B2 (enrdf_load_stackoverflow) * 1971-11-16 1976-09-13
US4356817A (en) * 1980-07-03 1982-11-02 The Procter & Gamble Company Inserter for vaginal product

Also Published As

Publication number Publication date
JPS58196061A (ja) 1983-11-15

Similar Documents

Publication Publication Date Title
US4745078A (en) Method for integrated series connection of thin film solar cells
US4542255A (en) Gridded thin film solar cell
US7498508B2 (en) High voltage solar cell and solar cell module
US4443652A (en) Electrically interconnected large area photovoltaic cells and method of producing said cells
US6441297B1 (en) Solar cell arrangement
JP3203078B2 (ja) 光起電力素子
US4624045A (en) Method of making thin film device
US5034068A (en) Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating the cell
US5268037A (en) Monolithic, parallel connected photovoltaic array and method for its manufacture
US5391236A (en) Photovoltaic microarray structure and fabrication method
US4879251A (en) Method of making series-connected, thin-film solar module formed of crystalline silicon
KR20010074628A (ko) 실리콘 박막, 집적 태양 전지, 모듈 및 그 제조방법
JPS60240171A (ja) 太陽光発電装置
US4570332A (en) Method of forming contact to thin film semiconductor device
US4401840A (en) Semicrystalline solar cell
JPH1065198A (ja) 直角三角形型太陽電池モジュール及びその製造方法
JPS6357953B2 (enrdf_load_stackoverflow)
JPS6357952B2 (enrdf_load_stackoverflow)
JP2000133828A (ja) 薄膜太陽電池及びその製造方法
JPH0864850A (ja) 薄膜太陽電池及びその製造方法
JP3209700B2 (ja) 光起電力装置及びモジュール
JP2968404B2 (ja) 光起電力装置の製造方法
JP3133269B2 (ja) 太陽電池パネル
JPS59208790A (ja) 太陽電池
JPS6316913B2 (enrdf_load_stackoverflow)