JPS6356655A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS6356655A
JPS6356655A JP61199116A JP19911686A JPS6356655A JP S6356655 A JPS6356655 A JP S6356655A JP 61199116 A JP61199116 A JP 61199116A JP 19911686 A JP19911686 A JP 19911686A JP S6356655 A JPS6356655 A JP S6356655A
Authority
JP
Japan
Prior art keywords
film
pattern
resist
etching
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61199116A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6348330B2 (enExample
Inventor
Shuzo Oshio
大塩 修三
Koichi Kobayashi
孝一 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61199116A priority Critical patent/JPS6356655A/ja
Publication of JPS6356655A publication Critical patent/JPS6356655A/ja
Publication of JPS6348330B2 publication Critical patent/JPS6348330B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP61199116A 1986-08-27 1986-08-27 パタ−ン形成方法 Granted JPS6356655A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61199116A JPS6356655A (ja) 1986-08-27 1986-08-27 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61199116A JPS6356655A (ja) 1986-08-27 1986-08-27 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS6356655A true JPS6356655A (ja) 1988-03-11
JPS6348330B2 JPS6348330B2 (enExample) 1988-09-28

Family

ID=16402398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61199116A Granted JPS6356655A (ja) 1986-08-27 1986-08-27 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS6356655A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441849A (en) * 1988-07-11 1995-08-15 Hitachi, Ltd. Method of forming pattern and making semiconductor device using radiation-induced conductive resin bottom resist layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441849A (en) * 1988-07-11 1995-08-15 Hitachi, Ltd. Method of forming pattern and making semiconductor device using radiation-induced conductive resin bottom resist layer

Also Published As

Publication number Publication date
JPS6348330B2 (enExample) 1988-09-28

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