JPS6356655A - パタ−ン形成方法 - Google Patents
パタ−ン形成方法Info
- Publication number
- JPS6356655A JPS6356655A JP61199116A JP19911686A JPS6356655A JP S6356655 A JPS6356655 A JP S6356655A JP 61199116 A JP61199116 A JP 61199116A JP 19911686 A JP19911686 A JP 19911686A JP S6356655 A JPS6356655 A JP S6356655A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- resist
- etching
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61199116A JPS6356655A (ja) | 1986-08-27 | 1986-08-27 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61199116A JPS6356655A (ja) | 1986-08-27 | 1986-08-27 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6356655A true JPS6356655A (ja) | 1988-03-11 |
| JPS6348330B2 JPS6348330B2 (enExample) | 1988-09-28 |
Family
ID=16402398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61199116A Granted JPS6356655A (ja) | 1986-08-27 | 1986-08-27 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6356655A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5441849A (en) * | 1988-07-11 | 1995-08-15 | Hitachi, Ltd. | Method of forming pattern and making semiconductor device using radiation-induced conductive resin bottom resist layer |
-
1986
- 1986-08-27 JP JP61199116A patent/JPS6356655A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5441849A (en) * | 1988-07-11 | 1995-08-15 | Hitachi, Ltd. | Method of forming pattern and making semiconductor device using radiation-induced conductive resin bottom resist layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6348330B2 (enExample) | 1988-09-28 |
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