JPH0314172B2 - - Google Patents

Info

Publication number
JPH0314172B2
JPH0314172B2 JP56028719A JP2871981A JPH0314172B2 JP H0314172 B2 JPH0314172 B2 JP H0314172B2 JP 56028719 A JP56028719 A JP 56028719A JP 2871981 A JP2871981 A JP 2871981A JP H0314172 B2 JPH0314172 B2 JP H0314172B2
Authority
JP
Japan
Prior art keywords
resist
layer
pattern
electron beam
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56028719A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57143826A (en
Inventor
Tomihiro Nakada
Tatsuya Ikeuchi
Koji Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP56028719A priority Critical patent/JPS57143826A/ja
Publication of JPS57143826A publication Critical patent/JPS57143826A/ja
Publication of JPH0314172B2 publication Critical patent/JPH0314172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56028719A 1981-02-28 1981-02-28 Formation of resist pattern on gapped semiconductor substrate Granted JPS57143826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56028719A JPS57143826A (en) 1981-02-28 1981-02-28 Formation of resist pattern on gapped semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56028719A JPS57143826A (en) 1981-02-28 1981-02-28 Formation of resist pattern on gapped semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS57143826A JPS57143826A (en) 1982-09-06
JPH0314172B2 true JPH0314172B2 (enExample) 1991-02-26

Family

ID=12256246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56028719A Granted JPS57143826A (en) 1981-02-28 1981-02-28 Formation of resist pattern on gapped semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS57143826A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59163828A (ja) * 1983-03-09 1984-09-14 Toshiba Corp 微細パタ−ンの形成方法
JPS6097624A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体装置の製造方法
JPS63129622A (ja) * 1986-11-20 1988-06-02 Fujitsu Ltd 半導体装置の製造方法
JP2691175B2 (ja) * 1989-09-08 1997-12-17 日本電信電話株式会社 パターン化酸化物超伝導膜形成法
US9632411B2 (en) * 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor

Also Published As

Publication number Publication date
JPS57143826A (en) 1982-09-06

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