JPS6353719B2 - - Google Patents
Info
- Publication number
- JPS6353719B2 JPS6353719B2 JP24614483A JP24614483A JPS6353719B2 JP S6353719 B2 JPS6353719 B2 JP S6353719B2 JP 24614483 A JP24614483 A JP 24614483A JP 24614483 A JP24614483 A JP 24614483A JP S6353719 B2 JPS6353719 B2 JP S6353719B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- gainasp
- final
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 60
- 239000012535 impurity Substances 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims 1
- 239000007791 liquid phase Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24614483A JPS60137081A (ja) | 1983-12-26 | 1983-12-26 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24614483A JPS60137081A (ja) | 1983-12-26 | 1983-12-26 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60137081A JPS60137081A (ja) | 1985-07-20 |
| JPS6353719B2 true JPS6353719B2 (enrdf_load_stackoverflow) | 1988-10-25 |
Family
ID=17144135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24614483A Granted JPS60137081A (ja) | 1983-12-26 | 1983-12-26 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60137081A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0289385A (ja) * | 1988-09-27 | 1990-03-29 | Nec Corp | 半導体素子の製造方法 |
-
1983
- 1983-12-26 JP JP24614483A patent/JPS60137081A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60137081A (ja) | 1985-07-20 |
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