JPS60137081A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS60137081A
JPS60137081A JP24614483A JP24614483A JPS60137081A JP S60137081 A JPS60137081 A JP S60137081A JP 24614483 A JP24614483 A JP 24614483A JP 24614483 A JP24614483 A JP 24614483A JP S60137081 A JPS60137081 A JP S60137081A
Authority
JP
Japan
Prior art keywords
layer
impurity
final
type inp
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24614483A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6353719B2 (enrdf_load_stackoverflow
Inventor
Yuzo Hirayama
雄三 平山
Junichi Kinoshita
順一 木下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24614483A priority Critical patent/JPS60137081A/ja
Publication of JPS60137081A publication Critical patent/JPS60137081A/ja
Publication of JPS6353719B2 publication Critical patent/JPS6353719B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP24614483A 1983-12-26 1983-12-26 半導体装置の製造方法 Granted JPS60137081A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24614483A JPS60137081A (ja) 1983-12-26 1983-12-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24614483A JPS60137081A (ja) 1983-12-26 1983-12-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60137081A true JPS60137081A (ja) 1985-07-20
JPS6353719B2 JPS6353719B2 (enrdf_load_stackoverflow) 1988-10-25

Family

ID=17144135

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24614483A Granted JPS60137081A (ja) 1983-12-26 1983-12-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60137081A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0289385A (ja) * 1988-09-27 1990-03-29 Nec Corp 半導体素子の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0289385A (ja) * 1988-09-27 1990-03-29 Nec Corp 半導体素子の製造方法

Also Published As

Publication number Publication date
JPS6353719B2 (enrdf_load_stackoverflow) 1988-10-25

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