JPS6353701B2 - - Google Patents

Info

Publication number
JPS6353701B2
JPS6353701B2 JP54025451A JP2545179A JPS6353701B2 JP S6353701 B2 JPS6353701 B2 JP S6353701B2 JP 54025451 A JP54025451 A JP 54025451A JP 2545179 A JP2545179 A JP 2545179A JP S6353701 B2 JPS6353701 B2 JP S6353701B2
Authority
JP
Japan
Prior art keywords
memory cell
line
semiconductor device
potential
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54025451A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55118666A (en
Inventor
Nobuaki Hotsuta
Tooru Tsujiide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2545179A priority Critical patent/JPS55118666A/ja
Publication of JPS55118666A publication Critical patent/JPS55118666A/ja
Publication of JPS6353701B2 publication Critical patent/JPS6353701B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP2545179A 1979-03-05 1979-03-05 Semiconductor device Granted JPS55118666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2545179A JPS55118666A (en) 1979-03-05 1979-03-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2545179A JPS55118666A (en) 1979-03-05 1979-03-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55118666A JPS55118666A (en) 1980-09-11
JPS6353701B2 true JPS6353701B2 (enExample) 1988-10-25

Family

ID=12166376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2545179A Granted JPS55118666A (en) 1979-03-05 1979-03-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55118666A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188863A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Field effect type semiconductor device
JPS5922359A (ja) * 1982-07-29 1984-02-04 Nec Corp 集積化半導体記憶装置
JPS6124090A (ja) * 1984-07-12 1986-02-01 Nec Corp スタンバイ機能を有するｃｍｏｓマイクロコンピュ−タ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432082A (en) * 1977-08-17 1979-03-09 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS55118666A (en) 1980-09-11

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