JPS6352474B2 - - Google Patents

Info

Publication number
JPS6352474B2
JPS6352474B2 JP53056446A JP5644678A JPS6352474B2 JP S6352474 B2 JPS6352474 B2 JP S6352474B2 JP 53056446 A JP53056446 A JP 53056446A JP 5644678 A JP5644678 A JP 5644678A JP S6352474 B2 JPS6352474 B2 JP S6352474B2
Authority
JP
Japan
Prior art keywords
electrode
voltage
field effect
evaluation circuit
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53056446A
Other languages
English (en)
Japanese (ja)
Other versions
JPS53141589A (en
Inventor
Moisuburugaa Gyuntaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS53141589A publication Critical patent/JPS53141589A/ja
Publication of JPS6352474B2 publication Critical patent/JPS6352474B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/456—Structures for regeneration, refreshing or leakage compensation

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
JP5644678A 1977-05-13 1978-05-12 Circuit for estimating charge transfer device Granted JPS53141589A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2721812A DE2721812C2 (de) 1977-05-13 1977-05-13 Auswerteschaltung für eine Ladungsverschiebeanordnung

Publications (2)

Publication Number Publication Date
JPS53141589A JPS53141589A (en) 1978-12-09
JPS6352474B2 true JPS6352474B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-10-19

Family

ID=6008936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5644678A Granted JPS53141589A (en) 1977-05-13 1978-05-12 Circuit for estimating charge transfer device

Country Status (5)

Country Link
US (1) US4272693A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS53141589A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2721812C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2390803A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1561628A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4538287A (en) * 1979-06-04 1985-08-27 Texas Instruments Incorporated Floating gate amplifier using conductive coupling for charge coupled devices
DE3021172A1 (de) * 1979-06-04 1980-12-11 Texas Instruments Inc Ladungsgekoppelter speicher und verfahren zum betreiben eines ladungsgekoppelten speichers
EP0028675B1 (en) * 1979-08-29 1984-06-06 Rockwell International Corporation Ccd integrated circuit
US4389615A (en) 1979-08-29 1983-06-21 Rockwell International Corporation CCD Demodulator circuit
US4631739A (en) * 1984-11-28 1986-12-23 Xerox Corporation High dynamic range charge amplifier
NL8502860A (nl) * 1985-10-21 1987-05-18 Philips Nv Besturingswerkwijze voor een geintegreerd circuit uitgevoerd met een gemeenschappelijke schakelelektrode voor ten minste twee tegengesteld schakelbare transistoren, en daartoe geschikte inrichting.
US5394003A (en) * 1993-05-20 1995-02-28 Electronic Decisions Inc. Acoustic charge transport device buffered architecture

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
FR2154395B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-05-03 1974-06-28 Ibm
FR2318485A1 (fr) * 1975-07-14 1977-02-11 Northern Telecom Ltd Circuit de detection non destructive de charges mobiles dans un dispositif a transfert de charge
DE2541686A1 (de) * 1975-09-18 1977-03-24 Siemens Ag Regenerierschaltung fuer ladungsgekoppelte elemente

Also Published As

Publication number Publication date
GB1561628A (en) 1980-02-27
JPS53141589A (en) 1978-12-09
DE2721812C2 (de) 1986-09-18
FR2390803B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1984-11-09
US4272693A (en) 1981-06-09
FR2390803A1 (fr) 1978-12-08
DE2721812A1 (de) 1978-11-23

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