JPS6351382B2 - - Google Patents
Info
- Publication number
- JPS6351382B2 JPS6351382B2 JP56161336A JP16133681A JPS6351382B2 JP S6351382 B2 JPS6351382 B2 JP S6351382B2 JP 56161336 A JP56161336 A JP 56161336A JP 16133681 A JP16133681 A JP 16133681A JP S6351382 B2 JPS6351382 B2 JP S6351382B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- fuse element
- insulating film
- guard ring
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56161336A JPS5863147A (ja) | 1981-10-09 | 1981-10-09 | 半導体装置 |
DE8282108975T DE3276981D1 (en) | 1981-10-09 | 1982-09-28 | Semiconductor device having a fuse element |
EP82108975A EP0076967B1 (en) | 1981-10-09 | 1982-09-28 | Semiconductor device having a fuse element |
US06/910,850 US4723155A (en) | 1981-10-09 | 1986-09-24 | Semiconductor device having a programmable fuse element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56161336A JPS5863147A (ja) | 1981-10-09 | 1981-10-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5863147A JPS5863147A (ja) | 1983-04-14 |
JPS6351382B2 true JPS6351382B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-10-13 |
Family
ID=15733139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56161336A Granted JPS5863147A (ja) | 1981-10-09 | 1981-10-09 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5863147A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0789567B2 (ja) * | 1985-02-25 | 1995-09-27 | 株式会社日立製作所 | 半導体装置 |
EP1340262A2 (en) * | 2000-11-27 | 2003-09-03 | Koninklijke Philips Electronics N.V. | Poly fuse rom with mos device based cell structure and the method for read and write therefore |
JP4584657B2 (ja) * | 2004-09-13 | 2010-11-24 | Okiセミコンダクタ株式会社 | 半導体装置 |
JP2007055433A (ja) | 2005-08-24 | 2007-03-08 | Takata Corp | チャイルドシート |
JP5132162B2 (ja) * | 2006-08-11 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
JP2017045839A (ja) * | 2015-08-26 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51113476A (en) * | 1975-03-31 | 1976-10-06 | Fujitsu Ltd | Semiconductor device manufacturing system |
-
1981
- 1981-10-09 JP JP56161336A patent/JPS5863147A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5863147A (ja) | 1983-04-14 |
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