JPS63501187A - 半導体レ−ザのストリップラインマウント - Google Patents

半導体レ−ザのストリップラインマウント

Info

Publication number
JPS63501187A
JPS63501187A JP61506095A JP50609586A JPS63501187A JP S63501187 A JPS63501187 A JP S63501187A JP 61506095 A JP61506095 A JP 61506095A JP 50609586 A JP50609586 A JP 50609586A JP S63501187 A JPS63501187 A JP S63501187A
Authority
JP
Japan
Prior art keywords
conductive layer
contact
laser
semiconductor optical
transmission line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61506095A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0482196B2 (https=
Inventor
ラルフ デイトリッヒ，ノーマン
レイモンド ホルブルック，ウォルター
フォーブス，ジュニヤ ジョンソン，アンダーソン
ザチャリアス，アルフレッド
Original Assignee
アメリカン テレフオン アンド テレグラフ カムパニ−
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アメリカン テレフオン アンド テレグラフ カムパニ− filed Critical アメリカン テレフオン アンド テレグラフ カムパニ−
Publication of JPS63501187A publication Critical patent/JPS63501187A/ja
Publication of JPH0482196B2 publication Critical patent/JPH0482196B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP61506095A 1985-10-28 1986-10-28 半導体レ−ザのストリップラインマウント Granted JPS63501187A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/792,055 US4761788A (en) 1985-10-28 1985-10-28 Stripline mount for semiconductor lasers
US792055 1985-10-28

Publications (2)

Publication Number Publication Date
JPS63501187A true JPS63501187A (ja) 1988-04-28
JPH0482196B2 JPH0482196B2 (https=) 1992-12-25

Family

ID=25155658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61506095A Granted JPS63501187A (ja) 1985-10-28 1986-10-28 半導体レ−ザのストリップラインマウント

Country Status (5)

Country Link
US (1) US4761788A (https=)
EP (1) EP0252094B1 (https=)
JP (1) JPS63501187A (https=)
CA (1) CA1254294A (https=)
WO (1) WO1987002834A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02220491A (ja) * 1988-12-21 1990-09-03 American Teleph & Telegr Co <Att> 半導体光学デバイスのためのシリコンベース搭載構造
JPH0311782A (ja) * 1989-06-09 1991-01-21 Matsushita Electric Ind Co Ltd 半導体レーザ装置

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH073907B2 (ja) * 1987-07-03 1995-01-18 株式会社日立製作所 デュアルインラインパッケ−ジ形半導体レ−ザモジュ−ル
JPH0817260B2 (ja) * 1987-12-18 1996-02-21 株式会社日立製作所 駆動回路内蔵半導体レーザモジユール
JPH0714102B2 (ja) * 1988-01-28 1995-02-15 三菱電機株式会社 光結合装置
NL8901523A (nl) * 1989-06-16 1991-01-16 Philips Nv Laserdiode module.
US5264392A (en) * 1990-07-05 1993-11-23 At&T Bell Laboratories Fabrication technique for silicon-based optical subassemblies
US5113404A (en) * 1990-07-05 1992-05-12 At&T Bell Laboratories Silicon-based optical subassembly
DE4110378A1 (de) * 1991-03-28 1992-10-01 Standard Elektrik Lorenz Ag Einrichtung mit einem traegerteil, einem halbleiterlaser und kontaktierungen
FR2696603B1 (fr) * 1992-10-05 1995-01-06 France Telecom Tête laser perfectionnée.
US5444564A (en) * 1994-02-09 1995-08-22 Hughes Aircraft Company Optoelectronic controlled RF matching circuit
JPH07288351A (ja) * 1994-04-19 1995-10-31 Fujitsu Ltd ペルチェ制御回路及びその素子構造
JP3553222B2 (ja) * 1995-09-20 2004-08-11 三菱電機株式会社 光変調器モジュール
KR0171374B1 (ko) * 1995-11-17 1999-05-01 양승택 광집속렌즈를 포함하는 레이저 모듈 및 그 렌즈 고정방법
US5982793A (en) * 1996-05-20 1999-11-09 Matsushita Electric Industrial Co., Ltd. Semiconductor laser module with internal matching circuit
EP0961372B1 (de) * 1998-05-26 2002-07-10 Infineon Technologies AG Hochfrequenz-Lasermodul und Verfahren zur Herstellung desselben
US6320706B1 (en) 2000-02-24 2001-11-20 Lightwave Electronics Method and apparatus for positioning and fixating an optical element
CN100428592C (zh) * 2001-03-05 2008-10-22 富士施乐株式会社 发光元件驱动装置和发光元件驱动系统
DE60101308T2 (de) 2001-03-30 2004-08-26 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Laserdiodenanpassungsschaltung und Impedanzanpassungsverfahren dafür
US7049759B2 (en) * 2001-12-06 2006-05-23 Linear Technology Corporation Circuitry and methods for improving the performance of a light emitting element
EP1389812A1 (en) * 2002-08-13 2004-02-18 Agilent Technologies Inc A mounting arrangement for high frequency electro-optical components
KR101473650B1 (ko) 2012-11-30 2014-12-17 (주) 빛과 전자 온도 조절이 가능한 고속 전송용 레이저 다이오드
US9859680B2 (en) 2013-12-17 2018-01-02 Lasermax, Inc. Shock resistant laser module
CN111969397B (zh) * 2020-08-17 2023-10-24 索尔思光电股份有限公司 一种包边封装的tosa及光模块

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757259A (en) * 1972-04-28 1973-09-04 Us Army Novel mounting technique for glass package diodes
US4023198A (en) * 1974-08-16 1977-05-10 Motorola, Inc. High frequency, high power semiconductor package
JPS5137548A (en) * 1974-09-26 1976-03-29 Daiichi Denshi Kogyo Dojikugatainpiidansuhenkanpatsudoyokaadoatsuteneeta narabini dojikugatainpiidansuhenkanpatsudo
GB1487010A (en) * 1975-04-01 1977-09-28 Standard Telephones Cables Ltd Laser stud mounts
DE2737345C2 (de) * 1976-08-20 1991-07-25 Canon K.K., Tokio/Tokyo Halbleiterlaser-Vorrichtung mit einem Peltier-Element
US4297653A (en) * 1979-04-30 1981-10-27 Xerox Corporation Hybrid semiconductor laser/detectors
US4301429A (en) * 1979-06-07 1981-11-17 Raytheon Company Microwave diode with high resistance layer
NL181963C (nl) * 1979-06-26 1987-12-01 Philips Nv Halfgeleiderlaserinrichting.
JPS594145A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
GB2124402B (en) * 1982-07-27 1986-01-22 Standard Telephones Cables Ltd Injection laser packages
DE3330434A1 (de) * 1983-08-19 1985-03-07 Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, 1000 Berlin Stabilisationseinrichtung fuer einen halbleiter-laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02220491A (ja) * 1988-12-21 1990-09-03 American Teleph & Telegr Co <Att> 半導体光学デバイスのためのシリコンベース搭載構造
JPH0311782A (ja) * 1989-06-09 1991-01-21 Matsushita Electric Ind Co Ltd 半導体レーザ装置

Also Published As

Publication number Publication date
US4761788A (en) 1988-08-02
CA1254294A (en) 1989-05-16
WO1987002834A1 (en) 1987-05-07
EP0252094B1 (en) 1991-03-13
EP0252094A1 (en) 1988-01-13
JPH0482196B2 (https=) 1992-12-25

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