JPS6349211B2 - - Google Patents
Info
- Publication number
- JPS6349211B2 JPS6349211B2 JP14759781A JP14759781A JPS6349211B2 JP S6349211 B2 JPS6349211 B2 JP S6349211B2 JP 14759781 A JP14759781 A JP 14759781A JP 14759781 A JP14759781 A JP 14759781A JP S6349211 B2 JPS6349211 B2 JP S6349211B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- solution
- parts
- bzma
- dissolved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229920001577 copolymer Polymers 0.000 claims description 3
- 238000007334 copolymerization reaction Methods 0.000 claims description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005227 gel permeation chromatography Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 4
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 4
- 239000003505 polymerization initiator Substances 0.000 description 4
- 238000001226 reprecipitation Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005292 vacuum distillation Methods 0.000 description 2
- WQMWHMMJVJNCAL-UHFFFAOYSA-N 2,4-dimethylpenta-1,4-dien-3-one Chemical compound CC(=C)C(=O)C(C)=C WQMWHMMJVJNCAL-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14759781A JPS5848048A (ja) | 1981-09-17 | 1981-09-17 | 遠紫外線露光用レジスト材料 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14759781A JPS5848048A (ja) | 1981-09-17 | 1981-09-17 | 遠紫外線露光用レジスト材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5848048A JPS5848048A (ja) | 1983-03-19 |
| JPS6349211B2 true JPS6349211B2 (enrdf_load_stackoverflow) | 1988-10-04 |
Family
ID=15433939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14759781A Granted JPS5848048A (ja) | 1981-09-17 | 1981-09-17 | 遠紫外線露光用レジスト材料 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5848048A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5868743A (ja) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | 放射線感応性有機高分子材料 |
| JP4053631B2 (ja) * | 1997-10-08 | 2008-02-27 | Ａｚエレクトロニックマテリアルズ株式会社 | 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体 |
| CN101560323B (zh) | 2003-04-02 | 2012-07-04 | 日产化学工业株式会社 | 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物 |
-
1981
- 1981-09-17 JP JP14759781A patent/JPS5848048A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5848048A (ja) | 1983-03-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4481049A (en) | Bilevel resist | |
| CA1248403A (en) | Bilevel resist | |
| JPS6048022B2 (ja) | 電子感応レジスト | |
| JPS58115435A (ja) | パタ−ン状フオトレジストの形成方法 | |
| JPS5949536A (ja) | 微細パタ−ン形成方法 | |
| CA1312843C (en) | Fabrication of electronic devices utilizing lithographic techniques | |
| JPS6349211B2 (enrdf_load_stackoverflow) | ||
| US4935094A (en) | Negative resist with oxygen plasma resistance | |
| JPH0353622B2 (enrdf_load_stackoverflow) | ||
| US4808682A (en) | Copolymers having o-nitrocarbinol ester groups, production of two-layer resists, and fabrication of semiconductor components | |
| EP0064864B1 (en) | Method of making sensitive positive electron beam resists | |
| JPS6349210B2 (enrdf_load_stackoverflow) | ||
| US4415653A (en) | Method of making sensitive positive electron beam resists | |
| JPH0353623B2 (enrdf_load_stackoverflow) | ||
| JPS59198446A (ja) | 感光性樹脂組成物及びその使用方法 | |
| US4617254A (en) | Process for forming detailed images | |
| JPS59121042A (ja) | ネガ型レジスト組成物 | |
| JPH05257285A (ja) | 放射線感光材料およびそれを用いるパターン形成方法 | |
| JPS61289345A (ja) | リソグラフイ用レジスト | |
| US4349647A (en) | Resist material for micro-fabrication | |
| JPH026512A (ja) | 光反応性重合体及びレジストの製造方法 | |
| US4604305A (en) | Improvements in contrast of a positive polymer resist having a glass transition temperature through control of the molecular weight distribution and prebaked temperature | |
| JPH022564A (ja) | ポジ型電子線レジスト | |
| JPS6349212B2 (enrdf_load_stackoverflow) | ||
| JPS6091350A (ja) | 電離放射線感応ネガ型レジスト |