JPS6349210B2 - - Google Patents

Info

Publication number
JPS6349210B2
JPS6349210B2 JP14854581A JP14854581A JPS6349210B2 JP S6349210 B2 JPS6349210 B2 JP S6349210B2 JP 14854581 A JP14854581 A JP 14854581A JP 14854581 A JP14854581 A JP 14854581A JP S6349210 B2 JPS6349210 B2 JP S6349210B2
Authority
JP
Japan
Prior art keywords
solution
resist
parts
phma
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14854581A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5849942A (ja
Inventor
Kunio Hibino
Takakatsu Morimoto
Katsumi Ogawa
Shinichi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14854581A priority Critical patent/JPS5849942A/ja
Publication of JPS5849942A publication Critical patent/JPS5849942A/ja
Publication of JPS6349210B2 publication Critical patent/JPS6349210B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
JP14854581A 1981-09-18 1981-09-18 遠紫外線露光用レジスト材料 Granted JPS5849942A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14854581A JPS5849942A (ja) 1981-09-18 1981-09-18 遠紫外線露光用レジスト材料

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14854581A JPS5849942A (ja) 1981-09-18 1981-09-18 遠紫外線露光用レジスト材料

Publications (2)

Publication Number Publication Date
JPS5849942A JPS5849942A (ja) 1983-03-24
JPS6349210B2 true JPS6349210B2 (enrdf_load_stackoverflow) 1988-10-04

Family

ID=15455156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14854581A Granted JPS5849942A (ja) 1981-09-18 1981-09-18 遠紫外線露光用レジスト材料

Country Status (1)

Country Link
JP (1) JPS5849942A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1882621B (zh) 2003-09-30 2013-05-15 三菱丽阳株式会社 工程塑料用流动性改进剂、含有它的热塑性树脂组合物及其成型品
JP5269585B2 (ja) * 2006-12-25 2013-08-21 三菱レイヨン株式会社 流動性向上剤、芳香族ポリカーボネート系樹脂組成物、及びその成形品
US8642699B2 (en) 2008-03-11 2014-02-04 Mitsubishi Rayon Co., Ltd. Fluidity improver for aromatic polycarbonate resin, process for producing the fluidity improver for aromatic polycarbonate resin, aromatic polycarbonate resin composition, and molded product

Also Published As

Publication number Publication date
JPS5849942A (ja) 1983-03-24

Similar Documents

Publication Publication Date Title
CA1140794A (en) Fabrication based on a positive acting phase compatible blend of matrix polymer and modifier polymer
JP2881969B2 (ja) 放射線感光レジストとパターン形成方法
JPS5872139A (ja) 感光性材料
US4788127A (en) Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene
JPS60229026A (ja) 電子デバイスの製造方法
JPS6048022B2 (ja) 電子感応レジスト
JPS6349210B2 (enrdf_load_stackoverflow)
US4808682A (en) Copolymers having o-nitrocarbinol ester groups, production of two-layer resists, and fabrication of semiconductor components
EP0064864B1 (en) Method of making sensitive positive electron beam resists
JPS6349211B2 (enrdf_load_stackoverflow)
US4415653A (en) Method of making sensitive positive electron beam resists
JPH0353623B2 (enrdf_load_stackoverflow)
JPH0544665B2 (enrdf_load_stackoverflow)
JPS62240953A (ja) レジスト
JPS5848046A (ja) 遠紫外線露光用レジスト材料
JPH0369098B2 (enrdf_load_stackoverflow)
US3964909A (en) Method of preparing a pattern on a silicon wafer
JPH05257285A (ja) 放射線感光材料およびそれを用いるパターン形成方法
JPH01126643A (ja) パターン形成材料
JPH0381143B2 (enrdf_load_stackoverflow)
JPS59121042A (ja) ネガ型レジスト組成物
US4349647A (en) Resist material for micro-fabrication
JPH022564A (ja) ポジ型電子線レジスト
JPS6091350A (ja) 電離放射線感応ネガ型レジスト
EP0007976A1 (en) Lithographic resist and device processing utilizing same