JPS5848048A - 遠紫外線露光用レジスト材料 - Google Patents
遠紫外線露光用レジスト材料Info
- Publication number
- JPS5848048A JPS5848048A JP14759781A JP14759781A JPS5848048A JP S5848048 A JPS5848048 A JP S5848048A JP 14759781 A JP14759781 A JP 14759781A JP 14759781 A JP14759781 A JP 14759781A JP S5848048 A JPS5848048 A JP S5848048A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- dissolved
- exposure
- resist material
- far
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 229920001577 copolymer Polymers 0.000 claims abstract description 4
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000007334 copolymerization reaction Methods 0.000 claims abstract description 3
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 claims abstract 3
- 238000001312 dry etching Methods 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 239000003505 polymerization initiator Substances 0.000 abstract description 5
- 239000002904 solvent Substances 0.000 abstract description 3
- 239000000178 monomer Substances 0.000 abstract 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 15
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 5
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 238000001226 reprecipitation Methods 0.000 description 4
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14759781A JPS5848048A (ja) | 1981-09-17 | 1981-09-17 | 遠紫外線露光用レジスト材料 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14759781A JPS5848048A (ja) | 1981-09-17 | 1981-09-17 | 遠紫外線露光用レジスト材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5848048A true JPS5848048A (ja) | 1983-03-19 |
JPS6349211B2 JPS6349211B2 (enrdf_load_stackoverflow) | 1988-10-04 |
Family
ID=15433939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14759781A Granted JPS5848048A (ja) | 1981-09-17 | 1981-09-17 | 遠紫外線露光用レジスト材料 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5848048A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5868743A (ja) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | 放射線感応性有機高分子材料 |
EP0942331A4 (en) * | 1997-10-08 | 2000-07-26 | Clariant Finance Bvi Ltd | ANTIREFLECTIVE OR PHOTOABSORBENT COATING COMPOSITION AND ITS POLYMER |
US7794919B2 (en) * | 2003-04-02 | 2010-09-14 | Nissan Chemical Industries, Ltd. | Composition for forming underlayer coating for lithography containing epoxy compound and carboxylic acid compound |
-
1981
- 1981-09-17 JP JP14759781A patent/JPS5848048A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5868743A (ja) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | 放射線感応性有機高分子材料 |
EP0942331A4 (en) * | 1997-10-08 | 2000-07-26 | Clariant Finance Bvi Ltd | ANTIREFLECTIVE OR PHOTOABSORBENT COATING COMPOSITION AND ITS POLYMER |
US7794919B2 (en) * | 2003-04-02 | 2010-09-14 | Nissan Chemical Industries, Ltd. | Composition for forming underlayer coating for lithography containing epoxy compound and carboxylic acid compound |
US8460855B2 (en) | 2003-04-02 | 2013-06-11 | Nissan Chemical Industries, Ltd. | Composition for forming underlayer coating for litography containing epoxy compound and carboxylic acid compound |
Also Published As
Publication number | Publication date |
---|---|
JPS6349211B2 (enrdf_load_stackoverflow) | 1988-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3368888B2 (ja) | 有機金属重合体およびその使用 | |
JPS60229026A (ja) | 電子デバイスの製造方法 | |
US4788127A (en) | Photoresist composition comprising an interpolymer of a silicon-containing monomer and an hydroxystyrene | |
JPS6048022B2 (ja) | 電子感応レジスト | |
JPS60119550A (ja) | パタン形成材料及びパタン形成方法 | |
JPS6049647B2 (ja) | 光又は放射線硬化性ポリオルガノシロキサン組成物 | |
CA1312843C (en) | Fabrication of electronic devices utilizing lithographic techniques | |
JPS5848048A (ja) | 遠紫外線露光用レジスト材料 | |
US4476217A (en) | Sensitive positive electron beam resists | |
US4808682A (en) | Copolymers having o-nitrocarbinol ester groups, production of two-layer resists, and fabrication of semiconductor components | |
JPS5848046A (ja) | 遠紫外線露光用レジスト材料 | |
EP0064864B1 (en) | Method of making sensitive positive electron beam resists | |
US4415653A (en) | Method of making sensitive positive electron beam resists | |
JPS5849942A (ja) | 遠紫外線露光用レジスト材料 | |
JPS59198446A (ja) | 感光性樹脂組成物及びその使用方法 | |
JPS62240953A (ja) | レジスト | |
JPH0353623B2 (enrdf_load_stackoverflow) | ||
US4824758A (en) | Photoresist compositions based on acetoxystyrene copolymers | |
JPH0369098B2 (enrdf_load_stackoverflow) | ||
JPH05257285A (ja) | 放射線感光材料およびそれを用いるパターン形成方法 | |
JPS61289345A (ja) | リソグラフイ用レジスト | |
JPS59121042A (ja) | ネガ型レジスト組成物 | |
JPH022564A (ja) | ポジ型電子線レジスト | |
JPH026512A (ja) | 光反応性重合体及びレジストの製造方法 | |
JPH02113253A (ja) | ポジ型レジスト |