JPS6348179B2 - - Google Patents
Info
- Publication number
- JPS6348179B2 JPS6348179B2 JP53152544A JP15254478A JPS6348179B2 JP S6348179 B2 JPS6348179 B2 JP S6348179B2 JP 53152544 A JP53152544 A JP 53152544A JP 15254478 A JP15254478 A JP 15254478A JP S6348179 B2 JPS6348179 B2 JP S6348179B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- oxide film
- substrate
- forming
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 35
- 239000012535 impurity Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052814 silicon oxide Inorganic materials 0.000 description 24
- 238000009792 diffusion process Methods 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- XUIMIQQOPSSXEZ-OUBTZVSYSA-N silicon-29 atom Chemical compound [29Si] XUIMIQQOPSSXEZ-OUBTZVSYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/39—Robotics, robotics to robotics hand
- G05B2219/39177—Compensation position working point as function of inclination tool, hand
Landscapes
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15254478A JPS5578541A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15254478A JPS5578541A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5578541A JPS5578541A (en) | 1980-06-13 |
| JPS6348179B2 true JPS6348179B2 (ko) | 1988-09-28 |
Family
ID=15542771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15254478A Granted JPS5578541A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5578541A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59161859A (ja) * | 1983-03-07 | 1984-09-12 | Toshiba Corp | 相補型ｍｏｓ半導体装置及びその製造方法 |
| JPS59161838A (ja) * | 1983-03-07 | 1984-09-12 | Toshiba Corp | 半導体装置及びその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5292489A (en) * | 1976-01-30 | 1977-08-03 | Hitachi Ltd | Manufacture of c-mis semiconductor |
-
1978
- 1978-12-08 JP JP15254478A patent/JPS5578541A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5292489A (en) * | 1976-01-30 | 1977-08-03 | Hitachi Ltd | Manufacture of c-mis semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5578541A (en) | 1980-06-13 |
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