JPS6346990B2 - - Google Patents

Info

Publication number
JPS6346990B2
JPS6346990B2 JP55110601A JP11060180A JPS6346990B2 JP S6346990 B2 JPS6346990 B2 JP S6346990B2 JP 55110601 A JP55110601 A JP 55110601A JP 11060180 A JP11060180 A JP 11060180A JP S6346990 B2 JPS6346990 B2 JP S6346990B2
Authority
JP
Japan
Prior art keywords
region
base
emitter
base region
silicide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55110601A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5735370A (en
Inventor
Kunio Aomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP11060180A priority Critical patent/JPS5735370A/ja
Publication of JPS5735370A publication Critical patent/JPS5735370A/ja
Publication of JPS6346990B2 publication Critical patent/JPS6346990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP11060180A 1980-08-12 1980-08-12 Semiconductor device Granted JPS5735370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11060180A JPS5735370A (en) 1980-08-12 1980-08-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11060180A JPS5735370A (en) 1980-08-12 1980-08-12 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5735370A JPS5735370A (en) 1982-02-25
JPS6346990B2 true JPS6346990B2 (enrdf_load_stackoverflow) 1988-09-20

Family

ID=14539976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11060180A Granted JPS5735370A (en) 1980-08-12 1980-08-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5735370A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169971A (ja) * 1982-03-30 1983-10-06 Fujitsu Ltd 半導体装置およびその製造方法
JPS59132663A (ja) * 1983-01-19 1984-07-30 Mitsubishi Electric Corp トランジスタ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7510903A (nl) * 1975-09-17 1977-03-21 Philips Nv Werkwijze voor het vervaardigen van een halfgelei- derinrichting, en inrichting vervaardigd volgens de werkwijze.
JPS5472673A (en) * 1977-11-21 1979-06-11 Nec Corp Semicondcutor device

Also Published As

Publication number Publication date
JPS5735370A (en) 1982-02-25

Similar Documents

Publication Publication Date Title
US3617824A (en) Mos device with a metal-silicide gate
US4709469A (en) Method of making a bipolar transistor with polycrystalline contacts
JPH05343403A (ja) 半導体装置
US4647958A (en) Bipolar transistor construction
JPS6050958A (ja) トランジスタ集積回路
US4803174A (en) Bipolar transistor integrated circuit and method of manufacturing the same
JPS62237754A (ja) 半導体集積回路装置及びその製造方法
JP2605030B2 (ja) 直交バイポーラ−トランジスタ
US4740482A (en) Method of manufacturing bipolar transistor
US4883772A (en) Process for making a self-aligned silicide shunt
JPH0553299B2 (enrdf_load_stackoverflow)
US4109273A (en) Contact electrode for semiconductor component
JP2741854B2 (ja) 半導体集積回路装置
JPS6346990B2 (enrdf_load_stackoverflow)
JPH06204167A (ja) 半導体装置の製造方法
JPH0254662B2 (enrdf_load_stackoverflow)
JPH03190139A (ja) 半導体集積回路装置
JPH0318738B2 (enrdf_load_stackoverflow)
JPH0420263B2 (enrdf_load_stackoverflow)
JPH0555553A (ja) 半導体集積回路
JPH0437581B2 (enrdf_load_stackoverflow)
JPS6246072B2 (enrdf_load_stackoverflow)
JP2845044B2 (ja) 半導体装置
JP2822382B2 (ja) 半導体装置及びその製造方法
JP2745946B2 (ja) 半導体集積回路の製造方法