JPS6346987B2 - - Google Patents

Info

Publication number
JPS6346987B2
JPS6346987B2 JP55057393A JP5739380A JPS6346987B2 JP S6346987 B2 JPS6346987 B2 JP S6346987B2 JP 55057393 A JP55057393 A JP 55057393A JP 5739380 A JP5739380 A JP 5739380A JP S6346987 B2 JPS6346987 B2 JP S6346987B2
Authority
JP
Japan
Prior art keywords
metal
polycrystalline silicon
semiconductor
thin film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55057393A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56153757A (en
Inventor
Norio Kususe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5739380A priority Critical patent/JPS56153757A/ja
Publication of JPS56153757A publication Critical patent/JPS56153757A/ja
Publication of JPS6346987B2 publication Critical patent/JPS6346987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP5739380A 1980-04-30 1980-04-30 Semiconductor device Granted JPS56153757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5739380A JPS56153757A (en) 1980-04-30 1980-04-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5739380A JPS56153757A (en) 1980-04-30 1980-04-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56153757A JPS56153757A (en) 1981-11-27
JPS6346987B2 true JPS6346987B2 (en, 2012) 1988-09-20

Family

ID=13054369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5739380A Granted JPS56153757A (en) 1980-04-30 1980-04-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56153757A (en, 2012)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5135289A (ja) * 1974-09-20 1976-03-25 Hitachi Ltd Handotaisochi
JPS51116679A (en) * 1975-04-05 1976-10-14 Fujitsu Ltd Diode
JPS5382275A (en) * 1976-12-28 1978-07-20 Fujitsu Ltd Production of semiconductor device
JPS53123673A (en) * 1977-04-04 1978-10-28 Nec Corp Manufacture of semiconductor device
JPS5563821A (en) * 1978-11-06 1980-05-14 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS56153757A (en) 1981-11-27

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