JPS6344770A - 電界効果型トランジスタの製造方法 - Google Patents

電界効果型トランジスタの製造方法

Info

Publication number
JPS6344770A
JPS6344770A JP61188817A JP18881786A JPS6344770A JP S6344770 A JPS6344770 A JP S6344770A JP 61188817 A JP61188817 A JP 61188817A JP 18881786 A JP18881786 A JP 18881786A JP S6344770 A JPS6344770 A JP S6344770A
Authority
JP
Japan
Prior art keywords
gate electrode
diffusion layer
effect transistor
field effect
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61188817A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0571174B2 (ko
Inventor
Shinichi Sato
真一 佐藤
Koji Ozaki
浩司 小崎
Takahisa Sakaemori
貴尚 栄森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61188817A priority Critical patent/JPS6344770A/ja
Publication of JPS6344770A publication Critical patent/JPS6344770A/ja
Publication of JPH0571174B2 publication Critical patent/JPH0571174B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP61188817A 1986-08-12 1986-08-12 電界効果型トランジスタの製造方法 Granted JPS6344770A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61188817A JPS6344770A (ja) 1986-08-12 1986-08-12 電界効果型トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61188817A JPS6344770A (ja) 1986-08-12 1986-08-12 電界効果型トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6344770A true JPS6344770A (ja) 1988-02-25
JPH0571174B2 JPH0571174B2 (ko) 1993-10-06

Family

ID=16230333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61188817A Granted JPS6344770A (ja) 1986-08-12 1986-08-12 電界効果型トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6344770A (ko)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02117947A (ja) * 1988-10-28 1990-05-02 Asahi Organic Chem Ind Co Ltd 硬化性組成物
US5089863A (en) * 1988-09-08 1992-02-18 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with T-shaped gate electrode
US5146291A (en) * 1988-08-31 1992-09-08 Mitsubishi Denki Kabushiki Kaisha MIS device having lightly doped drain structure
US5217913A (en) * 1988-08-31 1993-06-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers
US5254490A (en) * 1990-01-11 1993-10-19 Seiko Epson Corporation Self-aligned method of fabricating an LDD MOSFET device
US5371024A (en) * 1988-09-30 1994-12-06 Kabushiki Kaisha Toshiba Semiconductor device and process for manufacturing the same
US5441904A (en) * 1993-11-16 1995-08-15 Hyundai Electronics Industries, Co., Ltd. Method for forming a two-layered polysilicon gate electrode in a semiconductor device using grain boundaries
US5543646A (en) * 1988-09-08 1996-08-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode
US5559049A (en) * 1994-07-25 1996-09-24 Hyundai Electronics Insustries Co., Ltd Method of manufacturing a semiconductor device
JP2002532870A (ja) * 1998-12-07 2002-10-02 インテル・コーポレーション 切欠きゲートを備えたトランジスタ
JP2005217245A (ja) * 2004-01-30 2005-08-11 Toshiba Corp 半導体装置およびその製造方法
JP2009060104A (ja) * 2007-08-31 2009-03-19 Samsung Electronics Co Ltd ピン電界効果トランジスタ及びその製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0740542U (ja) * 1993-12-22 1995-07-18 積水化成品工業株式会社 緩衝性鮮度保持シート
JPH07251876A (ja) * 1994-03-09 1995-10-03 Shin Nippon Chem Oonamento Kogyo Kk 食品用下敷シート

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54108582A (en) * 1978-02-15 1979-08-25 Toshiba Corp Manufacture of silicon type field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54108582A (en) * 1978-02-15 1979-08-25 Toshiba Corp Manufacture of silicon type field effect transistor

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5146291A (en) * 1988-08-31 1992-09-08 Mitsubishi Denki Kabushiki Kaisha MIS device having lightly doped drain structure
US5217913A (en) * 1988-08-31 1993-06-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers
US5650342A (en) * 1988-09-08 1997-07-22 Mitsubishi Denki Kabushiki Kaisha Method of making a field effect transistor with a T shaped polysilicon gate electrode
US5089863A (en) * 1988-09-08 1992-02-18 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with T-shaped gate electrode
US5834817A (en) * 1988-09-08 1998-11-10 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode
US5471080A (en) * 1988-09-08 1995-11-28 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode
US5543646A (en) * 1988-09-08 1996-08-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with a shaped gate electrode
US5371024A (en) * 1988-09-30 1994-12-06 Kabushiki Kaisha Toshiba Semiconductor device and process for manufacturing the same
JPH02117947A (ja) * 1988-10-28 1990-05-02 Asahi Organic Chem Ind Co Ltd 硬化性組成物
US5254490A (en) * 1990-01-11 1993-10-19 Seiko Epson Corporation Self-aligned method of fabricating an LDD MOSFET device
US5441904A (en) * 1993-11-16 1995-08-15 Hyundai Electronics Industries, Co., Ltd. Method for forming a two-layered polysilicon gate electrode in a semiconductor device using grain boundaries
US5559049A (en) * 1994-07-25 1996-09-24 Hyundai Electronics Insustries Co., Ltd Method of manufacturing a semiconductor device
JP2002532870A (ja) * 1998-12-07 2002-10-02 インテル・コーポレーション 切欠きゲートを備えたトランジスタ
JP2005217245A (ja) * 2004-01-30 2005-08-11 Toshiba Corp 半導体装置およびその製造方法
JP4580657B2 (ja) * 2004-01-30 2010-11-17 株式会社東芝 半導体装置およびその製造方法
JP2009060104A (ja) * 2007-08-31 2009-03-19 Samsung Electronics Co Ltd ピン電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPH0571174B2 (ko) 1993-10-06

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