JPS6342867B2 - - Google Patents

Info

Publication number
JPS6342867B2
JPS6342867B2 JP55043813A JP4381380A JPS6342867B2 JP S6342867 B2 JPS6342867 B2 JP S6342867B2 JP 55043813 A JP55043813 A JP 55043813A JP 4381380 A JP4381380 A JP 4381380A JP S6342867 B2 JPS6342867 B2 JP S6342867B2
Authority
JP
Japan
Prior art keywords
groove
layer
thickness
substrate
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55043813A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56138977A (en
Inventor
Morichika Yano
Saburo Yamamoto
Yukio Kurata
Kaneki Matsui
Toshiro Hayakawa
Haruhisa Takiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4381380A priority Critical patent/JPS56138977A/ja
Publication of JPS56138977A publication Critical patent/JPS56138977A/ja
Publication of JPS6342867B2 publication Critical patent/JPS6342867B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Semiconductor Lasers (AREA)
JP4381380A 1980-03-31 1980-03-31 Semiconductor laser element Granted JPS56138977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4381380A JPS56138977A (en) 1980-03-31 1980-03-31 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4381380A JPS56138977A (en) 1980-03-31 1980-03-31 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS56138977A JPS56138977A (en) 1981-10-29
JPS6342867B2 true JPS6342867B2 (fr) 1988-08-25

Family

ID=12674173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4381380A Granted JPS56138977A (en) 1980-03-31 1980-03-31 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS56138977A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594194A (ja) * 1982-06-30 1984-01-10 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPH0682884B2 (ja) * 1984-03-28 1994-10-19 株式会社東芝 半導体レーザ
DE3587561T2 (de) * 1984-04-17 1994-01-05 Sharp Kk Halbleiterlaser.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54813A (en) * 1977-06-03 1979-01-06 Tokyo Electric Power Co Inc:The Signal transmission system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54813A (en) * 1977-06-03 1979-01-06 Tokyo Electric Power Co Inc:The Signal transmission system

Also Published As

Publication number Publication date
JPS56138977A (en) 1981-10-29

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