JPH0325037B2 - - Google Patents
Info
- Publication number
- JPH0325037B2 JPH0325037B2 JP59160897A JP16089784A JPH0325037B2 JP H0325037 B2 JPH0325037 B2 JP H0325037B2 JP 59160897 A JP59160897 A JP 59160897A JP 16089784 A JP16089784 A JP 16089784A JP H0325037 B2 JPH0325037 B2 JP H0325037B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- split
- type
- gaalas
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005253 cladding Methods 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 230000010355 oscillation Effects 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16089784A JPS6140077A (ja) | 1984-07-31 | 1984-07-31 | GaAs/GaAlAs埋め込み型面発光レーザ発振装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16089784A JPS6140077A (ja) | 1984-07-31 | 1984-07-31 | GaAs/GaAlAs埋め込み型面発光レーザ発振装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6140077A JPS6140077A (ja) | 1986-02-26 |
JPH0325037B2 true JPH0325037B2 (fr) | 1991-04-04 |
Family
ID=15724720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16089784A Granted JPS6140077A (ja) | 1984-07-31 | 1984-07-31 | GaAs/GaAlAs埋め込み型面発光レーザ発振装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6140077A (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2716774B2 (ja) * | 1989-01-27 | 1998-02-18 | 沖電気工業株式会社 | 面発光型半導体レーザ装置 |
JPH03190181A (ja) * | 1989-12-19 | 1991-08-20 | Nec Corp | 面発光レーザとその製造方法 |
JPH07118570B2 (ja) * | 1993-02-01 | 1995-12-18 | 日本電気株式会社 | 面発光素子およびその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5511338A (en) * | 1978-07-10 | 1980-01-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
JPS5698888A (en) * | 1980-01-09 | 1981-08-08 | Tokyo Inst Of Technol | Light emitting semiconductor laser |
-
1984
- 1984-07-31 JP JP16089784A patent/JPS6140077A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5511338A (en) * | 1978-07-10 | 1980-01-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
JPS5698888A (en) * | 1980-01-09 | 1981-08-08 | Tokyo Inst Of Technol | Light emitting semiconductor laser |
Also Published As
Publication number | Publication date |
---|---|
JPS6140077A (ja) | 1986-02-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |