JPH0325037B2 - - Google Patents

Info

Publication number
JPH0325037B2
JPH0325037B2 JP59160897A JP16089784A JPH0325037B2 JP H0325037 B2 JPH0325037 B2 JP H0325037B2 JP 59160897 A JP59160897 A JP 59160897A JP 16089784 A JP16089784 A JP 16089784A JP H0325037 B2 JPH0325037 B2 JP H0325037B2
Authority
JP
Japan
Prior art keywords
layer
split
type
gaalas
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59160897A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6140077A (ja
Inventor
Kenichi Iga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHINGIJUTSU JIGYODAN
Original Assignee
SHINGIJUTSU JIGYODAN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SHINGIJUTSU JIGYODAN filed Critical SHINGIJUTSU JIGYODAN
Priority to JP16089784A priority Critical patent/JPS6140077A/ja
Publication of JPS6140077A publication Critical patent/JPS6140077A/ja
Publication of JPH0325037B2 publication Critical patent/JPH0325037B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP16089784A 1984-07-31 1984-07-31 ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法 Granted JPS6140077A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16089784A JPS6140077A (ja) 1984-07-31 1984-07-31 ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16089784A JPS6140077A (ja) 1984-07-31 1984-07-31 ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6140077A JPS6140077A (ja) 1986-02-26
JPH0325037B2 true JPH0325037B2 (fr) 1991-04-04

Family

ID=15724720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16089784A Granted JPS6140077A (ja) 1984-07-31 1984-07-31 ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6140077A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2716774B2 (ja) * 1989-01-27 1998-02-18 沖電気工業株式会社 面発光型半導体レーザ装置
JPH03190181A (ja) * 1989-12-19 1991-08-20 Nec Corp 面発光レーザとその製造方法
JPH07118570B2 (ja) * 1993-02-01 1995-12-18 日本電気株式会社 面発光素子およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511338A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS5698888A (en) * 1980-01-09 1981-08-08 Tokyo Inst Of Technol Light emitting semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511338A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS5698888A (en) * 1980-01-09 1981-08-08 Tokyo Inst Of Technol Light emitting semiconductor laser

Also Published As

Publication number Publication date
JPS6140077A (ja) 1986-02-26

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term