JPS6234473Y2 - - Google Patents
Info
- Publication number
- JPS6234473Y2 JPS6234473Y2 JP14156381U JP14156381U JPS6234473Y2 JP S6234473 Y2 JPS6234473 Y2 JP S6234473Y2 JP 14156381 U JP14156381 U JP 14156381U JP 14156381 U JP14156381 U JP 14156381U JP S6234473 Y2 JPS6234473 Y2 JP S6234473Y2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- layer
- active layer
- laser
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000013078 crystal Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14156381U JPS6234473Y2 (fr) | 1981-09-24 | 1981-09-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14156381U JPS6234473Y2 (fr) | 1981-09-24 | 1981-09-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5778665U JPS5778665U (fr) | 1982-05-15 |
| JPS6234473Y2 true JPS6234473Y2 (fr) | 1987-09-02 |
Family
ID=29501382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14156381U Expired JPS6234473Y2 (fr) | 1981-09-24 | 1981-09-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6234473Y2 (fr) |
-
1981
- 1981-09-24 JP JP14156381U patent/JPS6234473Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5778665U (fr) | 1982-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5604764A (en) | Semiconductor laser | |
| US4803691A (en) | Lateral superradiance suppressing diode laser bar | |
| JP3510305B2 (ja) | 半導体レーザの製造方法，及び半導体レーザ | |
| US5920586A (en) | Semiconductor laser | |
| US4366568A (en) | Semiconductor laser | |
| US4841532A (en) | Semiconductor laser | |
| JPH07162086A (ja) | 半導体レーザの製造方法 | |
| JPS5940592A (ja) | 半導体レ−ザ素子 | |
| US4868838A (en) | Semiconductor laser device | |
| US4365336A (en) | Terraced substrate semiconductor laser | |
| US4532631A (en) | Semiconductor lasers and method for producing the same | |
| JPS6234473Y2 (fr) | ||
| US4841535A (en) | Semiconductor laser device | |
| JPH02228087A (ja) | 半導体レーザ素子 | |
| JPS58197787A (ja) | 半導体レ−ザ | |
| US6707835B2 (en) | Process for producing semiconductor laser element including S-ARROW structure formed by etching through mask having pair of parallel openings | |
| EP0298778B1 (fr) | Dispositifs de laser semi-conducteur et leur procédé de fabrication | |
| JPS6362292A (ja) | 半導体レ−ザ装置およびその製造方法 | |
| EP0032401B1 (fr) | Laser à semiconducteur | |
| JPH037153B2 (fr) | ||
| JP2973215B2 (ja) | 半導体レーザ装置 | |
| JP3277711B2 (ja) | 半導体レーザ及びその製造方法 | |
| US4358850A (en) | Terraced substrate semiconductor laser | |
| JPH01132191A (ja) | 半導体レーザ素子 | |
| JPH05226774A (ja) | 半導体レーザ素子とその製造方法 |