JPS6140077A - ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法 - Google Patents

ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法

Info

Publication number
JPS6140077A
JPS6140077A JP16089784A JP16089784A JPS6140077A JP S6140077 A JPS6140077 A JP S6140077A JP 16089784 A JP16089784 A JP 16089784A JP 16089784 A JP16089784 A JP 16089784A JP S6140077 A JPS6140077 A JP S6140077A
Authority
JP
Japan
Prior art keywords
layer
type
current
active layer
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16089784A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0325037B2 (fr
Inventor
Kenichi Iga
伊賀　健一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Priority to JP16089784A priority Critical patent/JPS6140077A/ja
Publication of JPS6140077A publication Critical patent/JPS6140077A/ja
Publication of JPH0325037B2 publication Critical patent/JPH0325037B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP16089784A 1984-07-31 1984-07-31 ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法 Granted JPS6140077A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16089784A JPS6140077A (ja) 1984-07-31 1984-07-31 ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16089784A JPS6140077A (ja) 1984-07-31 1984-07-31 ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6140077A true JPS6140077A (ja) 1986-02-26
JPH0325037B2 JPH0325037B2 (fr) 1991-04-04

Family

ID=15724720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16089784A Granted JPS6140077A (ja) 1984-07-31 1984-07-31 ＧａＡｓ／ＧａＡｌＡｓ埋め込み型面発光レーザ発振装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6140077A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02198184A (ja) * 1989-01-27 1990-08-06 Oki Electric Ind Co Ltd 面発光型半導体レーザ装置
JPH03190181A (ja) * 1989-12-19 1991-08-20 Nec Corp 面発光レーザとその製造方法
EP0609836A1 (fr) * 1993-02-01 1994-08-10 Nec Corporation Laser à émission de surface et son procédé de fabrication

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511338A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS5698888A (en) * 1980-01-09 1981-08-08 Tokyo Inst Of Technol Light emitting semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511338A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS5698888A (en) * 1980-01-09 1981-08-08 Tokyo Inst Of Technol Light emitting semiconductor laser

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02198184A (ja) * 1989-01-27 1990-08-06 Oki Electric Ind Co Ltd 面発光型半導体レーザ装置
JPH03190181A (ja) * 1989-12-19 1991-08-20 Nec Corp 面発光レーザとその製造方法
EP0609836A1 (fr) * 1993-02-01 1994-08-10 Nec Corporation Laser à émission de surface et son procédé de fabrication
US5500868A (en) * 1993-02-01 1996-03-19 Nec Corporation Vertical-to-surface transmission electro-photonic device with ion implanted current control regions
US5637511A (en) * 1993-02-01 1997-06-10 Kurihara; Kaori Vertical-to-surface transmission electro-photonic device and method for fabricating the same

Also Published As

Publication number Publication date
JPH0325037B2 (fr) 1991-04-04

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Legal Events

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EXPY Cancellation because of completion of term