JPS6140077A - GaAs/GaAlAs埋め込み型面発光レーザ発振装置の製造方法 - Google Patents
GaAs/GaAlAs埋め込み型面発光レーザ発振装置の製造方法Info
- Publication number
- JPS6140077A JPS6140077A JP16089784A JP16089784A JPS6140077A JP S6140077 A JPS6140077 A JP S6140077A JP 16089784 A JP16089784 A JP 16089784A JP 16089784 A JP16089784 A JP 16089784A JP S6140077 A JPS6140077 A JP S6140077A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- current
- active layer
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16089784A JPS6140077A (ja) | 1984-07-31 | 1984-07-31 | GaAs/GaAlAs埋め込み型面発光レーザ発振装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16089784A JPS6140077A (ja) | 1984-07-31 | 1984-07-31 | GaAs/GaAlAs埋め込み型面発光レーザ発振装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6140077A true JPS6140077A (ja) | 1986-02-26 |
JPH0325037B2 JPH0325037B2 (fr) | 1991-04-04 |
Family
ID=15724720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16089784A Granted JPS6140077A (ja) | 1984-07-31 | 1984-07-31 | GaAs/GaAlAs埋め込み型面発光レーザ発振装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6140077A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02198184A (ja) * | 1989-01-27 | 1990-08-06 | Oki Electric Ind Co Ltd | 面発光型半導体レーザ装置 |
JPH03190181A (ja) * | 1989-12-19 | 1991-08-20 | Nec Corp | 面発光レーザとその製造方法 |
EP0609836A1 (fr) * | 1993-02-01 | 1994-08-10 | Nec Corporation | Laser à émission de surface et son procédé de fabrication |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5511338A (en) * | 1978-07-10 | 1980-01-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
JPS5698888A (en) * | 1980-01-09 | 1981-08-08 | Tokyo Inst Of Technol | Light emitting semiconductor laser |
-
1984
- 1984-07-31 JP JP16089784A patent/JPS6140077A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5511338A (en) * | 1978-07-10 | 1980-01-26 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
JPS5698888A (en) * | 1980-01-09 | 1981-08-08 | Tokyo Inst Of Technol | Light emitting semiconductor laser |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02198184A (ja) * | 1989-01-27 | 1990-08-06 | Oki Electric Ind Co Ltd | 面発光型半導体レーザ装置 |
JPH03190181A (ja) * | 1989-12-19 | 1991-08-20 | Nec Corp | 面発光レーザとその製造方法 |
EP0609836A1 (fr) * | 1993-02-01 | 1994-08-10 | Nec Corporation | Laser à émission de surface et son procédé de fabrication |
US5500868A (en) * | 1993-02-01 | 1996-03-19 | Nec Corporation | Vertical-to-surface transmission electro-photonic device with ion implanted current control regions |
US5637511A (en) * | 1993-02-01 | 1997-06-10 | Kurihara; Kaori | Vertical-to-surface transmission electro-photonic device and method for fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
JPH0325037B2 (fr) | 1991-04-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |