JPS6341879B2 - - Google Patents
Info
- Publication number
- JPS6341879B2 JPS6341879B2 JP59109632A JP10963284A JPS6341879B2 JP S6341879 B2 JPS6341879 B2 JP S6341879B2 JP 59109632 A JP59109632 A JP 59109632A JP 10963284 A JP10963284 A JP 10963284A JP S6341879 B2 JPS6341879 B2 JP S6341879B2
- Authority
- JP
- Japan
- Prior art keywords
- container
- high dissociation
- dissociation pressure
- single crystal
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 26
- 238000010494 dissociation reaction Methods 0.000 claims description 19
- 230000005593 dissociations Effects 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000003566 sealing material Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910000531 Co alloy Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- -1 sialon Chemical compound 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910001080 W alloy Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 description 16
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012611 container material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10963284A JPS60255692A (ja) | 1984-05-31 | 1984-05-31 | 高解離圧化合物半導体単結晶引き上げ装置 |
| DE198484109948T DE139157T1 (de) | 1983-08-31 | 1984-08-21 | Vorrichtung zur zuechtung von einkristallinen zersetzbaren verbindungen. |
| EP84109948A EP0139157B1 (en) | 1983-08-31 | 1984-08-21 | Apparatus for growing single crystals of dissociative compounds |
| DE8484109948T DE3472577D1 (en) | 1983-08-31 | 1984-08-21 | Apparatus for growing single crystals of dissociative compounds |
| US06/644,840 US4704257A (en) | 1983-08-31 | 1984-08-28 | Apparatus for growing single crystals of dissociative compounds |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10963284A JPS60255692A (ja) | 1984-05-31 | 1984-05-31 | 高解離圧化合物半導体単結晶引き上げ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60255692A JPS60255692A (ja) | 1985-12-17 |
| JPS6341879B2 true JPS6341879B2 (it) | 1988-08-19 |
Family
ID=14515195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10963284A Granted JPS60255692A (ja) | 1983-08-31 | 1984-05-31 | 高解離圧化合物半導体単結晶引き上げ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60255692A (it) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2571555Y2 (ja) * | 1992-11-27 | 1998-05-18 | 松下電工株式会社 | コンセントユニット |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62197390A (ja) * | 1986-02-25 | 1987-09-01 | Mitsubishi Metal Corp | 二重構造容器 |
| JPS62297291A (ja) * | 1986-06-18 | 1987-12-24 | Res Dev Corp Of Japan | 砒化ガリウム単結晶引き上げ装置 |
| DE68917052T2 (de) * | 1988-08-19 | 1994-12-22 | Mitsubishi Materials Corp | Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen. |
| EP0355747B1 (en) * | 1988-08-19 | 1994-07-27 | Mitsubishi Materials Corporation | Method for monocrystalline growth of dissociative compound semiconductors |
| JPH085745B2 (ja) * | 1992-09-22 | 1996-01-24 | 三菱マテリアル株式会社 | 化合物半導体引き上げ装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS516871A (ja) * | 1974-06-03 | 1976-01-20 | Little Inc A | Mukikagobutsunoyojugoseinotamenohannoyoki oyobi sochi |
-
1984
- 1984-05-31 JP JP10963284A patent/JPS60255692A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS516871A (ja) * | 1974-06-03 | 1976-01-20 | Little Inc A | Mukikagobutsunoyojugoseinotamenohannoyoki oyobi sochi |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2571555Y2 (ja) * | 1992-11-27 | 1998-05-18 | 松下電工株式会社 | コンセントユニット |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60255692A (ja) | 1985-12-17 |
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