JPS6339961Y2 - - Google Patents
Info
- Publication number
- JPS6339961Y2 JPS6339961Y2 JP10555181U JP10555181U JPS6339961Y2 JP S6339961 Y2 JPS6339961 Y2 JP S6339961Y2 JP 10555181 U JP10555181 U JP 10555181U JP 10555181 U JP10555181 U JP 10555181U JP S6339961 Y2 JPS6339961 Y2 JP S6339961Y2
- Authority
- JP
- Japan
- Prior art keywords
- base plate
- reaction
- reaction vessel
- reaction chamber
- rings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007789 sealing Methods 0.000 claims description 17
- 239000011261 inert gas Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000012495 reaction gas Substances 0.000 claims description 10
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 6
- 238000004891 communication Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10555181U JPS5812939U (ja) | 1981-07-16 | 1981-07-16 | 半導体気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10555181U JPS5812939U (ja) | 1981-07-16 | 1981-07-16 | 半導体気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5812939U JPS5812939U (ja) | 1983-01-27 |
| JPS6339961Y2 true JPS6339961Y2 (en, 2012) | 1988-10-19 |
Family
ID=29900083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10555181U Granted JPS5812939U (ja) | 1981-07-16 | 1981-07-16 | 半導体気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5812939U (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008084557A (ja) * | 2006-09-26 | 2008-04-10 | Sukegawa Electric Co Ltd | 背面電子衝撃加熱装置 |
-
1981
- 1981-07-16 JP JP10555181U patent/JPS5812939U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5812939U (ja) | 1983-01-27 |
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