JPS5812939U - 半導体気相成長装置 - Google Patents
半導体気相成長装置Info
- Publication number
- JPS5812939U JPS5812939U JP10555181U JP10555181U JPS5812939U JP S5812939 U JPS5812939 U JP S5812939U JP 10555181 U JP10555181 U JP 10555181U JP 10555181 U JP10555181 U JP 10555181U JP S5812939 U JPS5812939 U JP S5812939U
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- vapor phase
- phase growth
- rings
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10555181U JPS5812939U (ja) | 1981-07-16 | 1981-07-16 | 半導体気相成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10555181U JPS5812939U (ja) | 1981-07-16 | 1981-07-16 | 半導体気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5812939U true JPS5812939U (ja) | 1983-01-27 |
JPS6339961Y2 JPS6339961Y2 (en, 2012) | 1988-10-19 |
Family
ID=29900083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10555181U Granted JPS5812939U (ja) | 1981-07-16 | 1981-07-16 | 半導体気相成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5812939U (en, 2012) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008084557A (ja) * | 2006-09-26 | 2008-04-10 | Sukegawa Electric Co Ltd | 背面電子衝撃加熱装置 |
-
1981
- 1981-07-16 JP JP10555181U patent/JPS5812939U/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008084557A (ja) * | 2006-09-26 | 2008-04-10 | Sukegawa Electric Co Ltd | 背面電子衝撃加熱装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS6339961Y2 (en, 2012) | 1988-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW291571B (en) | Parylene deposition apparatus including a heated and cooled support platen and an electrostatic clamping device | |
JPS5812939U (ja) | 半導体気相成長装置 | |
JP2525348B2 (ja) | 気相成長方法および装置 | |
JPH03241733A (ja) | 気体成長装置 | |
JP2528912B2 (ja) | 半導体成長装置 | |
JPS5710937A (en) | Plasma gaseous phase growth device | |
JPH04202091A (ja) | 化合物半導体の気相成長装置 | |
JP2850549B2 (ja) | 気相成長方法 | |
JPS5983032U (ja) | 縦型エピタキシヤル装置 | |
JPS6117494A (ja) | 気相成長装置 | |
JPH0519949Y2 (en, 2012) | ||
JPH02146165U (en, 2012) | ||
JPS60146337U (ja) | 半導体装置の製造装置 | |
JPS62201927U (en, 2012) | ||
JPS6344463Y2 (en, 2012) | ||
JPS5812941U (ja) | 気相成長装置用サセプタ | |
JPS61284915A (ja) | 薄膜気相成長装置 | |
JPS6120034U (ja) | 気相成長装置 | |
JPH01123413A (ja) | 気相成長装置 | |
JPH0614475Y2 (ja) | 半導体製造装置 | |
JPS61242998A (ja) | 炭化珪素単結晶半導体の製造方法 | |
JPS6092820U (ja) | 半導体気相成長装置 | |
JPS61242999A (ja) | 炭化珪素単結晶基板の製造方法 | |
JPS59185828U (ja) | 半導体製造装置 | |
JPS62190834A (ja) | 気相成長装置 |