JPS6339554B2 - - Google Patents

Info

Publication number
JPS6339554B2
JPS6339554B2 JP58212440A JP21244083A JPS6339554B2 JP S6339554 B2 JPS6339554 B2 JP S6339554B2 JP 58212440 A JP58212440 A JP 58212440A JP 21244083 A JP21244083 A JP 21244083A JP S6339554 B2 JPS6339554 B2 JP S6339554B2
Authority
JP
Japan
Prior art keywords
layer
layers
semiconductor thin
single crystal
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58212440A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60108395A (ja
Inventor
Toshimasa Ishida
Nagayasu Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP21244083A priority Critical patent/JPS60108395A/ja
Publication of JPS60108395A publication Critical patent/JPS60108395A/ja
Publication of JPS6339554B2 publication Critical patent/JPS6339554B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP21244083A 1983-11-14 1983-11-14 単結晶製造方法 Granted JPS60108395A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21244083A JPS60108395A (ja) 1983-11-14 1983-11-14 単結晶製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21244083A JPS60108395A (ja) 1983-11-14 1983-11-14 単結晶製造方法

Publications (2)

Publication Number Publication Date
JPS60108395A JPS60108395A (ja) 1985-06-13
JPS6339554B2 true JPS6339554B2 (enrdf_load_stackoverflow) 1988-08-05

Family

ID=16622639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21244083A Granted JPS60108395A (ja) 1983-11-14 1983-11-14 単結晶製造方法

Country Status (1)

Country Link
JP (1) JPS60108395A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102458158A (zh) * 2009-06-05 2012-05-16 Hf欧洲有限公司 包含沸石的食品

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541613A (en) * 1977-06-06 1979-01-08 Fuji Photo Film Co Ltd Electromagnetic radiation sensitive recording material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102458158A (zh) * 2009-06-05 2012-05-16 Hf欧洲有限公司 包含沸石的食品

Also Published As

Publication number Publication date
JPS60108395A (ja) 1985-06-13

Similar Documents

Publication Publication Date Title
US4596604A (en) Method of manufacturing a multilayer semiconductor device
JPS6339554B2 (enrdf_load_stackoverflow)
JPS621220A (ja) 欠陥が局在された配向シリコン単結晶膜を絶縁支持体上に製造する方法
JP2699325B2 (ja) 半導体装置の製造方法
JPS635913B2 (enrdf_load_stackoverflow)
JPS60246621A (ja) シリコン結晶層の製造方法
JPS5856457A (ja) 半導体装置の製造方法
JPH01290219A (ja) 半導体装置の製造方法
JPS59224114A (ja) 単結晶半導体薄膜の製造方法
JPS6339553B2 (enrdf_load_stackoverflow)
JPS63265464A (ja) 半導体装置の製造方法
JP2569402B2 (ja) 半導体薄膜結晶層の製造方法
JPH0799734B2 (ja) 単結晶成長方法
JP2999212B2 (ja) 溶融再結晶化法による半導体薄膜の製造方法
JP2526380B2 (ja) 多層半導体基板の製造方法
JPS61201414A (ja) シリコン単結晶層の製造方法
JPS62130510A (ja) 半導体基体の製造方法
JPS6252923A (ja) 誘電体による半導体層の絶縁分離方法
JPH03250620A (ja) 半導体装置の製造方法
JPS60106124A (ja) 絶縁基板上への半導体薄膜形成方法
JPH0797556B2 (ja) Ｓｏｉ基板の製造方法
JPH0652711B2 (ja) 半導体装置
JPS63300510A (ja) 積層型半導体装置
JPH0368532B2 (enrdf_load_stackoverflow)
JPS5919311A (ja) 半導体装置の製造方法