JPS6339110B2 - - Google Patents

Info

Publication number
JPS6339110B2
JPS6339110B2 JP58147990A JP14799083A JPS6339110B2 JP S6339110 B2 JPS6339110 B2 JP S6339110B2 JP 58147990 A JP58147990 A JP 58147990A JP 14799083 A JP14799083 A JP 14799083A JP S6339110 B2 JPS6339110 B2 JP S6339110B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
impurity concentration
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58147990A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6039872A (ja
Inventor
Hiromitsu Asai
Seigo Ando
Kunishige Oe
Takayuki Sugata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58147990A priority Critical patent/JPS6039872A/ja
Publication of JPS6039872A publication Critical patent/JPS6039872A/ja
Publication of JPS6339110B2 publication Critical patent/JPS6339110B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP58147990A 1983-08-15 1983-08-15 縦型電界効果トランジスタの製造方法 Granted JPS6039872A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58147990A JPS6039872A (ja) 1983-08-15 1983-08-15 縦型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58147990A JPS6039872A (ja) 1983-08-15 1983-08-15 縦型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6039872A JPS6039872A (ja) 1985-03-01
JPS6339110B2 true JPS6339110B2 (OSRAM) 1988-08-03

Family

ID=15442660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58147990A Granted JPS6039872A (ja) 1983-08-15 1983-08-15 縦型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6039872A (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226866A (ja) * 1985-07-26 1987-02-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 二重注入電界効果トランジスタ
KR950000158B1 (ko) * 1992-03-28 1995-01-10 삼성전자 주식회사 듀얼게이트금속반도체전계효과트랜지스터및그제조방법
JP4742399B2 (ja) * 1999-03-12 2011-08-10 住友化学株式会社 ３−５族化合物半導体の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2926741C2 (de) * 1979-07-03 1982-09-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekt-Transistor und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
JPS6039872A (ja) 1985-03-01

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