JPS6337511B2 - - Google Patents
Info
- Publication number
- JPS6337511B2 JPS6337511B2 JP56210866A JP21086681A JPS6337511B2 JP S6337511 B2 JPS6337511 B2 JP S6337511B2 JP 56210866 A JP56210866 A JP 56210866A JP 21086681 A JP21086681 A JP 21086681A JP S6337511 B2 JPS6337511 B2 JP S6337511B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- layer
- slope
- semi
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56210866A JPS58114460A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置とその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56210866A JPS58114460A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58114460A JPS58114460A (ja) | 1983-07-07 |
| JPS6337511B2 true JPS6337511B2 (enExample) | 1988-07-26 |
Family
ID=16596393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56210866A Granted JPS58114460A (ja) | 1981-12-28 | 1981-12-28 | 半導体装置とその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58114460A (enExample) |
-
1981
- 1981-12-28 JP JP56210866A patent/JPS58114460A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58114460A (ja) | 1983-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1148272A (en) | Vertical field effect transistor with improved gate and channel structure | |
| JP2581452B2 (ja) | 電界効果トランジスタ | |
| US4908325A (en) | Method of making heterojunction transistors with wide band-gap stop etch layer | |
| US4924283A (en) | Heterojunction bipolar transistor and process for fabricating same | |
| WO1989006444A2 (en) | Vertical power transistor and fabrication methods | |
| US5294566A (en) | Method of producing a semiconductor integrated circuit device composed of a negative differential resistance element and a FET transistor | |
| US5231040A (en) | Method of making a field effect transistor | |
| US5814548A (en) | Process for making n-channel or p-channel permeable base transistor with a plurality layers | |
| US5837570A (en) | Heterostructure semiconductor device and method of fabricating same | |
| CA1271850A (en) | Method for fabricating a field-effect transistor with a self-aligned gate | |
| JPS6337511B2 (enExample) | ||
| JP2701583B2 (ja) | トンネルトランジスタ及びその製造方法 | |
| KR910006751B1 (ko) | 반도체 집적회로장치 및 그의 제조방법 | |
| JPS6237890B2 (enExample) | ||
| JPH0817185B2 (ja) | 浮動電子通路電界効果トランジスタ及びその製造方法 | |
| JPH05190574A (ja) | 電界効果トランジスタ | |
| JP3236386B2 (ja) | 半導体装置の製造方法 | |
| JP2526492B2 (ja) | 半導体装置の製造方法 | |
| JP2996267B2 (ja) | 絶縁ゲート型電界効果トランジスタの製造方法 | |
| JPH0797634B2 (ja) | 電界効果トランジスタとその製造方法 | |
| JPS6366432B2 (enExample) | ||
| JPS6161549B2 (enExample) | ||
| JPH0199263A (ja) | 半導体集積回路およびその製造方法 | |
| JPS62260370A (ja) | 電界効果トランジスタの製造方法 | |
| JPH0439941A (ja) | 電界効果トランジスタ |