JPS6337079B2 - - Google Patents
Info
- Publication number
- JPS6337079B2 JPS6337079B2 JP58160071A JP16007183A JPS6337079B2 JP S6337079 B2 JPS6337079 B2 JP S6337079B2 JP 58160071 A JP58160071 A JP 58160071A JP 16007183 A JP16007183 A JP 16007183A JP S6337079 B2 JPS6337079 B2 JP S6337079B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- molybdenum block
- temperature
- molybdenum
- molecular beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16007183A JPS6051696A (ja) | 1983-08-30 | 1983-08-30 | 分子線エピタキシャル装置のウエハ装着構造 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16007183A JPS6051696A (ja) | 1983-08-30 | 1983-08-30 | 分子線エピタキシャル装置のウエハ装着構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6051696A JPS6051696A (ja) | 1985-03-23 |
JPS6337079B2 true JPS6337079B2 (en, 2012) | 1988-07-22 |
Family
ID=15707254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16007183A Granted JPS6051696A (ja) | 1983-08-30 | 1983-08-30 | 分子線エピタキシャル装置のウエハ装着構造 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6051696A (en, 2012) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01140771U (en, 2012) * | 1988-03-18 | 1989-09-27 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS519820B2 (en, 2012) * | 1972-07-14 | 1976-03-30 | ||
US4159919A (en) * | 1978-01-16 | 1979-07-03 | Bell Telephone Laboratories, Incorporated | Molecular beam epitaxy using premixing |
-
1983
- 1983-08-30 JP JP16007183A patent/JPS6051696A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01140771U (en, 2012) * | 1988-03-18 | 1989-09-27 |
Also Published As
Publication number | Publication date |
---|---|
JPS6051696A (ja) | 1985-03-23 |
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