JPS6337072B2 - - Google Patents
Info
- Publication number
- JPS6337072B2 JPS6337072B2 JP59181553A JP18155384A JPS6337072B2 JP S6337072 B2 JPS6337072 B2 JP S6337072B2 JP 59181553 A JP59181553 A JP 59181553A JP 18155384 A JP18155384 A JP 18155384A JP S6337072 B2 JPS6337072 B2 JP S6337072B2
- Authority
- JP
- Japan
- Prior art keywords
- oxygen content
- calcined body
- melting point
- point metal
- high melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 42
- 229910052760 oxygen Inorganic materials 0.000 claims description 42
- 239000001301 oxygen Substances 0.000 claims description 42
- 239000013077 target material Substances 0.000 claims description 21
- 238000002844 melting Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 229910021332 silicide Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 19
- 229910016006 MoSi Inorganic materials 0.000 description 16
- 239000000843 powder Substances 0.000 description 15
- 239000002994 raw material Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 14
- 238000005470 impregnation Methods 0.000 description 11
- 239000011863 silicon-based powder Substances 0.000 description 9
- 238000001354 calcination Methods 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000007731 hot pressing Methods 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 3
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59181553A JPS6158866A (ja) | 1984-08-30 | 1984-08-30 | 高融点金属珪化物基複合材料の製造法 |
| US06/769,935 US4619697A (en) | 1984-08-30 | 1985-08-27 | Sputtering target material and process for producing the same |
| GB08521604A GB2166160B (en) | 1984-08-30 | 1985-08-30 | Sputtering target material and process for producing the same |
| DE19853531085 DE3531085A1 (de) | 1984-08-30 | 1985-08-30 | Sputter-quellenmaterial und verfahren zu seiner herstellung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59181553A JPS6158866A (ja) | 1984-08-30 | 1984-08-30 | 高融点金属珪化物基複合材料の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6158866A JPS6158866A (ja) | 1986-03-26 |
| JPS6337072B2 true JPS6337072B2 (it) | 1988-07-22 |
Family
ID=16102795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59181553A Granted JPS6158866A (ja) | 1984-08-30 | 1984-08-30 | 高融点金属珪化物基複合材料の製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6158866A (it) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62171911A (ja) * | 1986-01-27 | 1987-07-28 | Nippon Mining Co Ltd | モリプデン或いはタングステンシリサイドの製造方法 |
| DE3627775A1 (de) * | 1986-08-16 | 1988-02-18 | Demetron | Verfahren zur herstellung von targets |
| JPS6350468A (ja) * | 1986-08-20 | 1988-03-03 | Mitsubishi Metal Corp | スパツタリング用タ−ゲツト材の製造方法 |
| JPH0791636B2 (ja) * | 1987-03-09 | 1995-10-04 | 日立金属株式会社 | スパツタリングタ−ゲツトおよびその製造方法 |
| JP2590091B2 (ja) * | 1987-03-26 | 1997-03-12 | 株式会社東芝 | 高融点金属シリサイドターゲットとその製造方法 |
| JPS63303017A (ja) * | 1987-06-02 | 1988-12-09 | Nippon Mining Co Ltd | タ−ゲツト及びその製造方法 |
| JPS6431966A (en) * | 1987-07-25 | 1989-02-02 | Tokin Corp | Alloy target material and its production |
| US5294321A (en) * | 1988-12-21 | 1994-03-15 | Kabushiki Kaisha Toshiba | Sputtering target |
| JPH0666288B2 (ja) * | 1988-12-21 | 1994-08-24 | 日立金属株式会社 | スパッタリング装置用ターゲット |
| KR930004295B1 (ko) * | 1988-12-24 | 1993-05-22 | 삼성전자 주식회사 | Vlsi 장치의 n+ 및 p+ 저항영역에 저저항 접속방법 |
-
1984
- 1984-08-30 JP JP59181553A patent/JPS6158866A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6158866A (ja) | 1986-03-26 |
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