JPS6336151B2 - - Google Patents

Info

Publication number
JPS6336151B2
JPS6336151B2 JP56062999A JP6299981A JPS6336151B2 JP S6336151 B2 JPS6336151 B2 JP S6336151B2 JP 56062999 A JP56062999 A JP 56062999A JP 6299981 A JP6299981 A JP 6299981A JP S6336151 B2 JPS6336151 B2 JP S6336151B2
Authority
JP
Japan
Prior art keywords
mask
active layer
impurity
forming
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56062999A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57177571A (en
Inventor
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56062999A priority Critical patent/JPS57177571A/ja
Priority to US06/342,912 priority patent/US4694563A/en
Priority to EP82300499A priority patent/EP0057605B1/en
Priority to DE8282300499T priority patent/DE3273695D1/de
Priority to CA000395215A priority patent/CA1187206A/en
Publication of JPS57177571A publication Critical patent/JPS57177571A/ja
Publication of JPS6336151B2 publication Critical patent/JPS6336151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0614—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made after the completion of the source and drain regions, e.g. gate-last processes using dummy gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H10D30/0616—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs using processes wherein the final gate is made before the completion of the source and drain regions, e.g. gate-first processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56062999A 1981-01-29 1981-04-24 Field effect transistor and manufacture thereof Granted JPS57177571A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56062999A JPS57177571A (en) 1981-04-24 1981-04-24 Field effect transistor and manufacture thereof
US06/342,912 US4694563A (en) 1981-01-29 1982-01-26 Process for making Schottky-barrier gate FET
EP82300499A EP0057605B1 (en) 1981-01-29 1982-01-29 A schottky-barrier gate field effect transistor and a process for the production of the same
DE8282300499T DE3273695D1 (en) 1981-01-29 1982-01-29 A schottky-barrier gate field effect transistor and a process for the production of the same
CA000395215A CA1187206A (en) 1981-01-29 1982-01-29 Schottky-barrier gate field effect transistor and a process for the production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062999A JPS57177571A (en) 1981-04-24 1981-04-24 Field effect transistor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57177571A JPS57177571A (en) 1982-11-01
JPS6336151B2 true JPS6336151B2 (enrdf_load_stackoverflow) 1988-07-19

Family

ID=13216579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062999A Granted JPS57177571A (en) 1981-01-29 1981-04-24 Field effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57177571A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60241271A (ja) * 1984-05-16 1985-11-30 Nec Corp 電界効果トランジスタの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS535581A (en) * 1976-07-06 1978-01-19 Toshiba Corp Schottky gate type field effect transistor

Also Published As

Publication number Publication date
JPS57177571A (en) 1982-11-01

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