JPS633447B2 - - Google Patents

Info

Publication number
JPS633447B2
JPS633447B2 JP54089917A JP8991779A JPS633447B2 JP S633447 B2 JPS633447 B2 JP S633447B2 JP 54089917 A JP54089917 A JP 54089917A JP 8991779 A JP8991779 A JP 8991779A JP S633447 B2 JPS633447 B2 JP S633447B2
Authority
JP
Japan
Prior art keywords
junction
layer
mask
semiconductor substrate
deep
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54089917A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5615035A (en
Inventor
Mitsunori Ketsusako
Haruo Ito
Tadashi Saito
Nobuo Nakamura
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP8991779A priority Critical patent/JPS5615035A/ja
Publication of JPS5615035A publication Critical patent/JPS5615035A/ja
Publication of JPS633447B2 publication Critical patent/JPS633447B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P32/14—

Landscapes

  • Photovoltaic Devices (AREA)
JP8991779A 1979-07-17 1979-07-17 Manufacture of semiconductor device Granted JPS5615035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8991779A JPS5615035A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8991779A JPS5615035A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5615035A JPS5615035A (en) 1981-02-13
JPS633447B2 true JPS633447B2 (Direct) 1988-01-23

Family

ID=13984051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8991779A Granted JPS5615035A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5615035A (Direct)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57136368A (en) * 1981-02-17 1982-08-23 Fujitsu Ltd Manufacture of mis transistor
JPS57138157A (en) * 1981-02-20 1982-08-26 Fujitsu Ltd Manufacture of semiconductor device
US4542580A (en) * 1983-02-14 1985-09-24 Prime Computer, Inc. Method of fabricating n-type silicon regions and associated contacts
KR100974221B1 (ko) * 2008-04-17 2010-08-06 엘지전자 주식회사 레이저 어닐링을 이용한 태양전지의 선택적 에미터형성방법 및 이를 이용한 태양전지의 제조방법
KR101037316B1 (ko) * 2010-09-30 2011-05-26 (유)에스엔티 태양전지의 선택적 에미터 형성장치
CN104170095B (zh) * 2012-03-14 2016-10-19 Imec非营利协会 用于制造具有镀敷触点的光伏电池的方法
JP2014072474A (ja) * 2012-10-01 2014-04-21 Sharp Corp 光電変換素子の製造方法及び光電変換素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926456A (Direct) * 1972-07-11 1974-03-08

Also Published As

Publication number Publication date
JPS5615035A (en) 1981-02-13

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