JPS633394B2 - - Google Patents

Info

Publication number
JPS633394B2
JPS633394B2 JP54100893A JP10089379A JPS633394B2 JP S633394 B2 JPS633394 B2 JP S633394B2 JP 54100893 A JP54100893 A JP 54100893A JP 10089379 A JP10089379 A JP 10089379A JP S633394 B2 JPS633394 B2 JP S633394B2
Authority
JP
Japan
Prior art keywords
level
node
output
signal
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54100893A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5625290A (en
Inventor
Shoji Ishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10089379A priority Critical patent/JPS5625290A/ja
Priority to US06/175,806 priority patent/US4390797A/en
Priority to DE8080302700T priority patent/DE3071677D1/de
Priority to EP80302700A priority patent/EP0023847B1/en
Publication of JPS5625290A publication Critical patent/JPS5625290A/ja
Publication of JPS633394B2 publication Critical patent/JPS633394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01728—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals
    • H03K19/01742—Modifications for accelerating switching in field-effect transistor circuits in synchronous circuits, i.e. by using clock signals by means of a pull-up or down element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • Databases & Information Systems (AREA)
  • Nonlinear Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Dram (AREA)
  • Manipulation Of Pulses (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
JP10089379A 1979-08-07 1979-08-07 Semiconductor circuit Granted JPS5625290A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10089379A JPS5625290A (en) 1979-08-07 1979-08-07 Semiconductor circuit
US06/175,806 US4390797A (en) 1979-08-07 1980-08-06 Semiconductor circuit
DE8080302700T DE3071677D1 (en) 1979-08-07 1980-08-07 Semiconductor circuit for a dynamic random access memory
EP80302700A EP0023847B1 (en) 1979-08-07 1980-08-07 Semiconductor circuit for a dynamic random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10089379A JPS5625290A (en) 1979-08-07 1979-08-07 Semiconductor circuit

Publications (2)

Publication Number Publication Date
JPS5625290A JPS5625290A (en) 1981-03-11
JPS633394B2 true JPS633394B2 (US07902200-20110308-C00004.png) 1988-01-23

Family

ID=14286007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10089379A Granted JPS5625290A (en) 1979-08-07 1979-08-07 Semiconductor circuit

Country Status (4)

Country Link
US (1) US4390797A (US07902200-20110308-C00004.png)
EP (1) EP0023847B1 (US07902200-20110308-C00004.png)
JP (1) JPS5625290A (US07902200-20110308-C00004.png)
DE (1) DE3071677D1 (US07902200-20110308-C00004.png)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56101694A (en) * 1980-01-18 1981-08-14 Nec Corp Semiconductor circuit
JPS57152589A (en) * 1981-03-13 1982-09-20 Fujitsu Ltd Semiconductor memory
US4725746A (en) * 1981-10-20 1988-02-16 Kabushiki Kaisha Toshiba MOSFET buffer circuit with an improved bootstrapping circuit
JPS58185091A (ja) * 1982-04-24 1983-10-28 Toshiba Corp 昇圧電圧出力回路および昇圧電圧出力回路を備えたアドレスデコ−ド回路
US4498021A (en) * 1982-07-13 1985-02-05 Matsushita Electric Industrial Co., Ltd. Booster for transmitting digital signal
DE3243496A1 (de) * 1982-11-24 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Integrierte halbleiterschaltung mit einem dynamischen schreib-lese-speicher
EP0125699A3 (en) * 1983-05-17 1986-10-08 Kabushiki Kaisha Toshiba Data output circuit for dynamic memory device
JPS60111391A (ja) * 1983-11-21 1985-06-17 Nec Corp 半導体出力回路
JPS60119698A (ja) * 1983-12-01 1985-06-27 Fujitsu Ltd 半導体メモリ
EP0152939B1 (en) * 1984-02-20 1993-07-28 Hitachi, Ltd. Arithmetic operation unit and arithmetic operation circuit
US4595845A (en) * 1984-03-13 1986-06-17 Mostek Corporation Non-overlapping clock CMOS circuit with two threshold voltages
JPS60198620A (ja) * 1984-03-21 1985-10-08 Sharp Corp Ｌｓｉ化したタイミング発生回路
US4598216A (en) * 1984-08-27 1986-07-01 Ncr Corporation Assist circuit for a data bus in a data processing system
US4797573A (en) * 1984-11-21 1989-01-10 Nec Corporation Output circuit with improved timing control circuit
JPS637591A (ja) * 1986-06-25 1988-01-13 Nec Corp アドレスマルチプレクス型半導体メモリ
NL8800872A (nl) * 1988-04-06 1989-11-01 Philips Nv Geintegreerde schakeling.
US5414583A (en) * 1991-12-19 1995-05-09 Unitrode Corporation Current source bus terminator with voltage clamping and steady state power reduction
US5336948A (en) * 1992-12-16 1994-08-09 Unitrode Corporation Active negation emulator
KR100358118B1 (ko) * 2000-06-08 2002-10-25 한국전자통신연구원 고속 동기를 갖는 위상동기루프

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5570991A (en) * 1978-09-07 1980-05-28 Texas Instruments Inc Semiconductor highhspeed read*write memory unit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699539A (en) * 1970-12-16 1972-10-17 North American Rockwell Bootstrapped inverter memory cell
NL7502375A (nl) * 1975-02-28 1976-08-31 Philips Nv Versterkercircuit.
JPS5922316B2 (ja) * 1976-02-24 1984-05-25 株式会社東芝 ダイナミツクメモリ装置
US4181862A (en) * 1976-09-27 1980-01-01 Rca Corporation High speed resettable dynamic counter
JPS54153565A (en) * 1978-05-24 1979-12-03 Nec Corp Semiconductor circuit using insulation gate type field effect transistor
DE2824727A1 (de) * 1978-06-06 1979-12-13 Ibm Deutschland Schaltung zum nachladen der ausgangsknoten von feldeffekt-transistorschaltungen

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5570991A (en) * 1978-09-07 1980-05-28 Texas Instruments Inc Semiconductor highhspeed read*write memory unit

Also Published As

Publication number Publication date
US4390797A (en) 1983-06-28
DE3071677D1 (en) 1986-09-04
JPS5625290A (en) 1981-03-11
EP0023847A3 (en) 1981-09-23
EP0023847B1 (en) 1986-07-30
EP0023847A2 (en) 1981-02-11

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