JPS6333647U - - Google Patents
Info
- Publication number
- JPS6333647U JPS6333647U JP12777486U JP12777486U JPS6333647U JP S6333647 U JPS6333647 U JP S6333647U JP 12777486 U JP12777486 U JP 12777486U JP 12777486 U JP12777486 U JP 12777486U JP S6333647 U JPS6333647 U JP S6333647U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor thin
- conductivity type
- thin film
- types
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
第１図は本考案光起電力装置の一実施例を示す
模式的断面図、第２図は本考案実施例と比較例の
収集効率特性図、第３図は本考案光起電力装置の
他の実施例を示す模式的断面図、第４図は光電変
換効率と型半導体薄膜の膜厚との関係を示す特
性図、第５図は劣化率と型半導体薄膜の膜厚と
の関係を示す特性図、である。 １……基板、２……受光面電極、３……Ｐ型半
導体薄膜、４……Ｎ型半導体薄膜、５……背面電
極、６……型半導体薄膜。
模式的断面図、第２図は本考案実施例と比較例の
収集効率特性図、第３図は本考案光起電力装置の
他の実施例を示す模式的断面図、第４図は光電変
換効率と型半導体薄膜の膜厚との関係を示す特
性図、第５図は劣化率と型半導体薄膜の膜厚と
の関係を示す特性図、である。 １……基板、２……受光面電極、３……Ｐ型半
導体薄膜、４……Ｎ型半導体薄膜、５……背面電
極、６……型半導体薄膜。
Claims (1)
- 少なくとも１種類の層が一導電型の非晶質半導
体である組成の異なる２種類の薄膜層を周期的に
複数回積層した一導電型の半導体薄膜と、該一導
電型半導体薄膜に対して逆導電型の半導体薄膜と
からなり、上記導電型の相い異なる半導体薄膜同
士を、上記一導電型半導体薄膜を光入射側に配置
した状態で直接若しくは導電型決定不純物が実質
的にドーブされていない膜厚約２０００Å以下の
型非晶質半導体薄膜を挾んで接触させたことを
特徴とする光起電力装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12777486U JPS6333647U (ja) | 1986-08-21 | 1986-08-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12777486U JPS6333647U (ja) | 1986-08-21 | 1986-08-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6333647U true JPS6333647U (ja) | 1988-03-04 |
Family
ID=31022848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12777486U Pending JPS6333647U (ja) | 1986-08-21 | 1986-08-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6333647U (ja) |
-
1986
- 1986-08-21 JP JP12777486U patent/JPS6333647U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH03102749U (ja) | ||
| JPS6161270B2 (ja) | ||
| JPS6333647U (ja) | ||
| JPH0456351U (ja) | ||
| JPS63134557U (ja) | ||
| JPS6411556U (ja) | ||
| JPS57157578A (en) | Active crystalline silicon thin film photovoltaic element | |
| JPS6042877A (ja) | 受光素子 | |
| JPH0158962U (ja) | ||
| JP2569633B2 (ja) | 光電変換装置 | |
| JPS61203665A (ja) | アモルフアスシリコン型フオトダイオ−ドの製造方法 | |
| JPS629747Y2 (ja) | ||
| JPS6219761U (ja) | ||
| JPH0195770U (ja) | ||
| JP2869178B2 (ja) | 光起電力装置 | |
| JP3295725B2 (ja) | 光電変換素子 | |
| JPH0180961U (ja) | ||
| JPS6322633B2 (ja) | ||
| JPS6459966A (en) | Laminated multilayer amorphous solar cell | |
| JPS6418763U (ja) | ||
| JPH0178052U (ja) | ||
| JPS5923572A (ja) | 太陽電池 | |
| JPS616873A (ja) | 光起電力素子 | |
| JPH0381647U (ja) | ||
| JPS62124865U (ja) |