JPH0456351U - - Google Patents
Info
- Publication number
- JPH0456351U JPH0456351U JP1990099643U JP9964390U JPH0456351U JP H0456351 U JPH0456351 U JP H0456351U JP 1990099643 U JP1990099643 U JP 1990099643U JP 9964390 U JP9964390 U JP 9964390U JP H0456351 U JPH0456351 U JP H0456351U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- light
- photovoltaic device
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 239000012212 insulator Substances 0.000 claims 1
- 239000011241 protective layer Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Description
第1図は本考案の光起電力装置の一例を示す断
面図、第2図は第1図の−線矢視断面図、第
3図は本考案のA装置と比較例のX装置とにおい
て層の膜厚を変化させたときの変換効率の差異
を示すグラフ、第4図は光起電力装置の変形例を
示す断面図、第5図は本考案の第2実施例に係る
光起電力装置の断面図、第6図はこのような光起
電力装置を多数並設した場合の断面図、第7図は
第6図の装置を作製する場合の作製工程を示す工
程図、第8図及び第9図は従来の光起電力装置を
示す図であり、第8図は基板として遮光性基板を
用いた光起電力装置の断面図、第9図は基板とし
て透光性基板を用いた光起電力装置の断面図であ
る。 1……遮光性基板、2……透光性絶縁層、3…
…光起電力素子、5……第1透明電極、6……非
単結晶半導体層、7……第2透明電極、20……
透光性基板、21……第1透明電極、22……非
単結晶半導体層、23……第2透明電極、24…
…透光性保護膜、25……フイルム。
面図、第2図は第1図の−線矢視断面図、第
3図は本考案のA装置と比較例のX装置とにおい
て層の膜厚を変化させたときの変換効率の差異
を示すグラフ、第4図は光起電力装置の変形例を
示す断面図、第5図は本考案の第2実施例に係る
光起電力装置の断面図、第6図はこのような光起
電力装置を多数並設した場合の断面図、第7図は
第6図の装置を作製する場合の作製工程を示す工
程図、第8図及び第9図は従来の光起電力装置を
示す図であり、第8図は基板として遮光性基板を
用いた光起電力装置の断面図、第9図は基板とし
て透光性基板を用いた光起電力装置の断面図であ
る。 1……遮光性基板、2……透光性絶縁層、3…
…光起電力素子、5……第1透明電極、6……非
単結晶半導体層、7……第2透明電極、20……
透光性基板、21……第1透明電極、22……非
単結晶半導体層、23……第2透明電極、24…
…透光性保護膜、25……フイルム。
Claims (1)
- 【実用新案登録請求の範囲】 (1) 遮光性基板の表面に、第1電極と、非単結
晶半導体層と、第2電極とが順次形成された光起
電力装置において、 前記両電極は透明電極から成ると共に、前記遮
光性基板は金属基板或いは少なくとも前記第2電
極側の表面が金属で被覆された基板から構成され
、且つこの遮光性基板と前記第1電極との間に透
光性絶縁層が設けられていることを特徴とする光
起電力装置。 (2) 透光性基板の裏面に、第1電極と、非単結
晶半導体層と、第2電極とが順次形成された光起
電力装置において、 前記両電極は透明電極から成ると共に、第2電
極より裏側には順に、透光性絶縁保護層と、金属
或いは少なくとも前記第2電極側の表面が金属で
被覆されたものから成る反射層とが順に設けられ
ていることを特徴とする光起電力装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990099643U JPH0456351U (ja) | 1990-09-20 | 1990-09-20 | |
US07/762,850 US5236516A (en) | 1990-09-20 | 1991-09-18 | Photovoltaic apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990099643U JPH0456351U (ja) | 1990-09-20 | 1990-09-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0456351U true JPH0456351U (ja) | 1992-05-14 |
Family
ID=14252737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1990099643U Pending JPH0456351U (ja) | 1990-09-20 | 1990-09-20 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5236516A (ja) |
JP (1) | JPH0456351U (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2752169B1 (fr) * | 1996-08-09 | 1998-09-18 | Salomon Sa | Dispositif de retenue d'une chaussure sur une planche de glisse |
JP3510740B2 (ja) * | 1996-08-26 | 2004-03-29 | シャープ株式会社 | 集積型薄膜太陽電池の製造方法 |
US6248950B1 (en) * | 1998-02-21 | 2001-06-19 | Space Systems/Loral, Inc. | Solar array augmented electrostatic discharge for spacecraft in geosynchronous earth orbit |
US20100108140A1 (en) * | 2008-03-14 | 2010-05-06 | E. I. Du Pont De Nemours And Company | Device capable of thermally cooling while electrically insulating |
US20090229809A1 (en) * | 2008-03-14 | 2009-09-17 | E. I. Du Pont De Nemours And Company | Device capable of thermally cooling while electrically insulating |
KR101161378B1 (ko) * | 2008-09-09 | 2012-07-02 | 엘지전자 주식회사 | 백색 반사층을 구비한 박막형 태양전지 모듈 및 그 제조방법 |
US9000288B2 (en) | 2011-07-22 | 2015-04-07 | Space Systems/Loral, Llc | Current collector bar and grid pattern for a photovoltaic solar cell |
US9627565B2 (en) | 2013-11-27 | 2017-04-18 | Space Systems/Loral, Llc | Integral corner bypass diode interconnecting configuration for multiple solar cells |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59124175A (ja) * | 1982-12-29 | 1984-07-18 | Kanegafuchi Chem Ind Co Ltd | 光起電力装置 |
JPS59147469A (ja) * | 1983-02-14 | 1984-08-23 | Hitachi Ltd | 非晶質シリコン太陽電池 |
US4663495A (en) * | 1985-06-04 | 1987-05-05 | Atlantic Richfield Company | Transparent photovoltaic module |
DE3727826A1 (de) * | 1987-08-20 | 1989-03-02 | Siemens Ag | Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium |
US4880664A (en) * | 1987-08-31 | 1989-11-14 | Solarex Corporation | Method of depositing textured tin oxide |
-
1990
- 1990-09-20 JP JP1990099643U patent/JPH0456351U/ja active Pending
-
1991
- 1991-09-18 US US07/762,850 patent/US5236516A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5236516A (en) | 1993-08-17 |
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