JPS6331946B2 - - Google Patents
Info
- Publication number
- JPS6331946B2 JPS6331946B2 JP54044637A JP4463779A JPS6331946B2 JP S6331946 B2 JPS6331946 B2 JP S6331946B2 JP 54044637 A JP54044637 A JP 54044637A JP 4463779 A JP4463779 A JP 4463779A JP S6331946 B2 JPS6331946 B2 JP S6331946B2
- Authority
- JP
- Japan
- Prior art keywords
- groove
- semiconductor substrate
- main surface
- semiconductor
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4463779A JPS55138261A (en) | 1979-04-12 | 1979-04-12 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4463779A JPS55138261A (en) | 1979-04-12 | 1979-04-12 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55138261A JPS55138261A (en) | 1980-10-28 |
JPS6331946B2 true JPS6331946B2 (en, 2012) | 1988-06-27 |
Family
ID=12696935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4463779A Granted JPS55138261A (en) | 1979-04-12 | 1979-04-12 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138261A (en, 2012) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5139792B2 (en, 2012) * | 1972-06-19 | 1976-10-29 | ||
US3924265A (en) * | 1973-08-29 | 1975-12-02 | American Micro Syst | Low capacitance V groove MOS NOR gate and method of manufacture |
JPS535488U (en, 2012) * | 1976-07-01 | 1978-01-18 | ||
JPS5923115B2 (ja) * | 1976-10-08 | 1984-05-30 | 株式会社東芝 | メサ型半導体装置 |
JPS5515204A (en) * | 1978-07-19 | 1980-02-02 | Toshiba Corp | Manufacturing method for contact type semiconductor device |
-
1979
- 1979-04-12 JP JP4463779A patent/JPS55138261A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55138261A (en) | 1980-10-28 |
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