JPS6331933B2 - - Google Patents

Info

Publication number
JPS6331933B2
JPS6331933B2 JP55141623A JP14162380A JPS6331933B2 JP S6331933 B2 JPS6331933 B2 JP S6331933B2 JP 55141623 A JP55141623 A JP 55141623A JP 14162380 A JP14162380 A JP 14162380A JP S6331933 B2 JPS6331933 B2 JP S6331933B2
Authority
JP
Japan
Prior art keywords
melting point
high melting
point metal
gas
molybdenum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55141623A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5766645A (en
Inventor
Toshihiko Fukuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55141623A priority Critical patent/JPS5766645A/ja
Publication of JPS5766645A publication Critical patent/JPS5766645A/ja
Publication of JPS6331933B2 publication Critical patent/JPS6331933B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69433—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP55141623A 1980-10-09 1980-10-09 Manufacture of semiconductor device Granted JPS5766645A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55141623A JPS5766645A (en) 1980-10-09 1980-10-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55141623A JPS5766645A (en) 1980-10-09 1980-10-09 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5766645A JPS5766645A (en) 1982-04-22
JPS6331933B2 true JPS6331933B2 (en:Method) 1988-06-27

Family

ID=15296340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55141623A Granted JPS5766645A (en) 1980-10-09 1980-10-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5766645A (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4535528A (en) * 1983-12-02 1985-08-20 Hewlett-Packard Company Method for improving reflow of phosphosilicate glass by arsenic implantation
US5940735A (en) * 1997-08-25 1999-08-17 Advanced Micro Devices, Inc. Reduction of charge loss in nonvolatile memory cells by phosphorus implantation into PECVD nitride/oxynitride films

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5471577A (en) * 1977-11-18 1979-06-08 Toshiba Corp Production of semiconductor device
JPS5479567A (en) * 1977-12-07 1979-06-25 Chiyou Uru Esu Ai Gijiyutsu Ke Method of fabricating semiconductor

Also Published As

Publication number Publication date
JPS5766645A (en) 1982-04-22

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