JPS63300237A - 気相ホトレジスト・シリル化方法 - Google Patents

気相ホトレジスト・シリル化方法

Info

Publication number
JPS63300237A
JPS63300237A JP63090484A JP9048488A JPS63300237A JP S63300237 A JPS63300237 A JP S63300237A JP 63090484 A JP63090484 A JP 63090484A JP 9048488 A JP9048488 A JP 9048488A JP S63300237 A JPS63300237 A JP S63300237A
Authority
JP
Japan
Prior art keywords
silylation
photoresist
resist
vapor phase
silyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63090484A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0456981B2 (enExample
Inventor
ステイブン・ジヨン・ホームズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS63300237A publication Critical patent/JPS63300237A/ja
Publication of JPH0456981B2 publication Critical patent/JPH0456981B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP63090484A 1987-05-19 1988-04-14 気相ホトレジスト・シリル化方法 Granted JPS63300237A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US051354 1987-05-19
US07/051,354 US4808511A (en) 1987-05-19 1987-05-19 Vapor phase photoresist silylation process

Publications (2)

Publication Number Publication Date
JPS63300237A true JPS63300237A (ja) 1988-12-07
JPH0456981B2 JPH0456981B2 (enExample) 1992-09-10

Family

ID=21970788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63090484A Granted JPS63300237A (ja) 1987-05-19 1988-04-14 気相ホトレジスト・シリル化方法

Country Status (4)

Country Link
US (1) US4808511A (enExample)
EP (1) EP0291670B1 (enExample)
JP (1) JPS63300237A (enExample)
DE (1) DE3861783D1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0324550A (ja) * 1989-06-22 1991-02-01 Toshiba Corp パターン形成方法
JPH03126036A (ja) * 1989-10-11 1991-05-29 Oki Electric Ind Co Ltd ３層レジスト法用の中間層形成材
JPH03280061A (ja) * 1990-03-29 1991-12-11 Hoya Corp レジストパターンの形成方法

Families Citing this family (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186788A (en) * 1987-07-23 1993-02-16 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
US4996136A (en) * 1988-02-25 1991-02-26 At&T Bell Laboratories Radiation sensitive materials and devices made therewith
NL8801255A (nl) * 1988-05-16 1989-12-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US5407786A (en) * 1988-08-09 1995-04-18 Kabushiki Kaisha Toshiba Method of forming a mask on a semiconductor substrate via photosensitive resin deposition, ammonia treatment and selective silylation
EP0354536B1 (en) * 1988-08-09 1997-04-23 Kabushiki Kaisha Toshiba Pattering method
JP3001607B2 (ja) * 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
US5041362A (en) * 1989-07-06 1991-08-20 Texas Instruments Incorporated Dry developable resist etch chemistry
GB8920622D0 (en) * 1989-09-12 1989-10-25 Du Pont Improvements in or relating to lithographic printing plates
US5139925A (en) * 1989-10-18 1992-08-18 Massachusetts Institute Of Technology Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser
US5032216A (en) * 1989-10-20 1991-07-16 E. I. Du Pont De Nemours And Company Non-photographic method for patterning organic polymer films
CA2131507C (en) * 1993-11-08 1999-11-02 Edwin A. Chandross Resist materials and related processes
JPH11511900A (ja) * 1994-11-22 1999-10-12 コンプレツクス フルイツド システムズ，インコーポレーテツド マイクロエレクトロニクス用途のための非アミン系フォトレジスト密着促進剤
CA2224856C (en) * 1995-06-22 2002-04-30 Yuri Gudimenko Surface modification of polymers and carbon-based materials
US6258972B1 (en) 1995-08-03 2001-07-10 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
US5707783A (en) * 1995-12-04 1998-01-13 Complex Fluid Systems, Inc. Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging
US5667920A (en) * 1996-03-11 1997-09-16 Polaroid Corporation Process for preparing a color filter
US6054255A (en) * 1996-08-01 2000-04-25 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
TW351834B (en) * 1996-10-16 1999-02-01 Matsushita Electric Industrial Co Ltd Method of round formation and surface treatment agent
TW353775B (en) * 1996-11-27 1999-03-01 Tokyo Electron Ltd Production of semiconductor device
TW392229B (en) 1997-01-23 2000-06-01 Matsushita Electric Industrial Co Ltd Method of manufacturing semiconductor device and apparatus for same
TW383416B (en) * 1997-06-26 2000-03-01 Matsushita Electric Industrial Co Ltd Pattern forming method
KR100268912B1 (en) * 1997-11-06 2000-12-01 Hyundai Micro Electronics Co Method for etching of semiconductor device
US6221680B1 (en) * 1998-07-31 2001-04-24 International Business Machines Corporation Patterned recess formation using acid diffusion
US6140023A (en) * 1998-12-01 2000-10-31 Advanced Micro Devices, Inc. Method for transferring patterns created by lithography
US6475904B2 (en) * 1998-12-03 2002-11-05 Advanced Micro Devices, Inc. Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
AU2001210739A1 (en) * 2000-02-22 2001-09-03 Euv Limited Liability Corporation Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths
SG142150A1 (en) * 2000-07-16 2008-05-28 Univ Texas High-resolution overlay alignment systems for imprint lithography
CN1262883C (zh) * 2000-07-17 2006-07-05 得克萨斯州大学系统董事会 影印用于平版印刷工艺中的自动化液体分配的方法和系统
US6954275B2 (en) * 2000-08-01 2005-10-11 Boards Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US20060005657A1 (en) * 2004-06-01 2006-01-12 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
AU2001297642A1 (en) * 2000-10-12 2002-09-04 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro- and nano-imprint lithography
US6602794B1 (en) * 2001-03-09 2003-08-05 Advanced Micro Devices, Inc. Silylation process for forming contacts
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US20030235787A1 (en) * 2002-06-24 2003-12-25 Watts Michael P.C. Low viscosity high resolution patterning material
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6980282B2 (en) 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6929762B2 (en) * 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US7452574B2 (en) * 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US20040168613A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US7179396B2 (en) * 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7122079B2 (en) * 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7396475B2 (en) * 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) * 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US7307118B2 (en) * 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
US7136150B2 (en) * 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US8211214B2 (en) * 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7090716B2 (en) * 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US20050084804A1 (en) * 2003-10-16 2005-04-21 Molecular Imprints, Inc. Low surface energy templates
US8076386B2 (en) * 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US20060062922A1 (en) * 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US7759407B2 (en) * 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US8557351B2 (en) 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
JP5705751B2 (ja) * 2009-03-10 2015-04-22 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ｌｏｗ−ｋシリル化用の環式アミノ化合物
US20110081618A1 (en) * 2009-10-06 2011-04-07 Nanya Technology Corporation Litho-litho etch (lle) double patterning methods
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723937A (en) * 1980-07-17 1982-02-08 Matsushita Electric Ind Co Ltd Photographic etching method
JPS60241225A (ja) * 1984-05-14 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 陰画レジスト像を生成する方法
JPS61107346A (ja) * 1984-10-26 1986-05-26 ユセベ　エレクトロニックス，ソシエテ　アノニム フォトレジスト層中にネガ図形を形成する方法

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US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
GB8308823D0 (en) * 1983-03-30 1983-05-11 Dow Corning Ltd Silylation process
US4596761A (en) * 1983-11-02 1986-06-24 Hughes Aircraft Company Graft polymerized SiO2 lithographic masks
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JPS5723937A (en) * 1980-07-17 1982-02-08 Matsushita Electric Ind Co Ltd Photographic etching method
JPS60241225A (ja) * 1984-05-14 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 陰画レジスト像を生成する方法
JPS61107346A (ja) * 1984-10-26 1986-05-26 ユセベ　エレクトロニックス，ソシエテ　アノニム フォトレジスト層中にネガ図形を形成する方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0324550A (ja) * 1989-06-22 1991-02-01 Toshiba Corp パターン形成方法
JPH03126036A (ja) * 1989-10-11 1991-05-29 Oki Electric Ind Co Ltd ３層レジスト法用の中間層形成材
JPH03280061A (ja) * 1990-03-29 1991-12-11 Hoya Corp レジストパターンの形成方法

Also Published As

Publication number Publication date
EP0291670A1 (en) 1988-11-23
EP0291670B1 (en) 1991-02-20
JPH0456981B2 (enExample) 1992-09-10
US4808511A (en) 1989-02-28
DE3861783D1 (de) 1991-03-28

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