AU2001210739A1 - Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths - Google Patents

Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths

Info

Publication number
AU2001210739A1
AU2001210739A1 AU2001210739A AU1073901A AU2001210739A1 AU 2001210739 A1 AU2001210739 A1 AU 2001210739A1 AU 2001210739 A AU2001210739 A AU 2001210739A AU 1073901 A AU1073901 A AU 1073901A AU 2001210739 A1 AU2001210739 A1 AU 2001210739A1
Authority
AU
Australia
Prior art keywords
microlithography
radiation
thin layer
imaging process
strongly attenuated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001210739A
Inventor
David R. Wheeler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EUV LLC
Original Assignee
EUV LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/510,726 external-priority patent/US6673525B1/en
Application filed by EUV LLC filed Critical EUV LLC
Publication of AU2001210739A1 publication Critical patent/AU2001210739A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
AU2001210739A 2000-02-22 2000-10-05 Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths Abandoned AU2001210739A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/510,726 US6673525B1 (en) 1998-04-07 2000-02-22 Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths
US09510726 2000-02-22
PCT/US2000/027594 WO2001063359A2 (en) 2000-02-22 2000-10-05 Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths

Publications (1)

Publication Number Publication Date
AU2001210739A1 true AU2001210739A1 (en) 2001-09-03

Family

ID=24031924

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001210739A Abandoned AU2001210739A1 (en) 2000-02-22 2000-10-05 Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths

Country Status (2)

Country Link
AU (1) AU2001210739A1 (en)
WO (1) WO2001063359A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100383636B1 (en) * 2000-05-31 2003-05-16 삼성전자주식회사 Method for forming pattern in semiconductor device
KR100919350B1 (en) 2008-04-24 2009-09-25 주식회사 하이닉스반도체 Method of forming a pattern of semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
US5108875A (en) * 1988-07-29 1992-04-28 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
EP0523957A1 (en) * 1991-07-17 1993-01-20 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition
WO1999052018A1 (en) * 1998-04-07 1999-10-14 Euv Limited Liability Corporation Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths

Also Published As

Publication number Publication date
WO2001063359A2 (en) 2001-08-30
WO2001063359A3 (en) 2002-01-10

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