JPS6328995B2 - - Google Patents
Info
- Publication number
- JPS6328995B2 JPS6328995B2 JP55073689A JP7368980A JPS6328995B2 JP S6328995 B2 JPS6328995 B2 JP S6328995B2 JP 55073689 A JP55073689 A JP 55073689A JP 7368980 A JP7368980 A JP 7368980A JP S6328995 B2 JPS6328995 B2 JP S6328995B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- silicon oxide
- silicon
- selectively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 9
- 239000001307 helium Substances 0.000 claims description 8
- 229910052734 helium Inorganic materials 0.000 claims description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 8
- 239000004215 Carbon black (E152) Substances 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 7
- 229930195733 hydrocarbon Natural products 0.000 claims description 7
- 150000002430 hydrocarbons Chemical class 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7368980A JPS56169776A (en) | 1980-06-03 | 1980-06-03 | Selective dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7368980A JPS56169776A (en) | 1980-06-03 | 1980-06-03 | Selective dry etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56169776A JPS56169776A (en) | 1981-12-26 |
| JPS6328995B2 true JPS6328995B2 (de) | 1988-06-10 |
Family
ID=13525425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7368980A Granted JPS56169776A (en) | 1980-06-03 | 1980-06-03 | Selective dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56169776A (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5748235A (en) * | 1980-07-24 | 1982-03-19 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4585517A (en) * | 1985-01-31 | 1986-04-29 | Motorola, Inc. | Reactive sputter cleaning of semiconductor wafer |
| DE69223534T2 (de) * | 1991-03-22 | 1998-07-09 | Shimadzu Corp | Trockenätzverfahren und Anwendung davon |
| JPH05234959A (ja) * | 1991-08-16 | 1993-09-10 | Hitachi Ltd | ドライエッチング方法及びドライエッチング装置 |
| US5282925A (en) * | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
| KR20010051575A (ko) * | 1999-11-09 | 2001-06-25 | 조셉 제이. 스위니 | 살리사이드 처리를 위한 화학적 플라즈마 세정 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5595327A (en) * | 1979-01-16 | 1980-07-19 | Hitachi Ltd | Reactive sputter-etching |
-
1980
- 1980-06-03 JP JP7368980A patent/JPS56169776A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5595327A (en) * | 1979-01-16 | 1980-07-19 | Hitachi Ltd | Reactive sputter-etching |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56169776A (en) | 1981-12-26 |
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